Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques

Pedram Khalili Amiri, Kang L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.

Original languageEnglish (US)
Title of host publication2014 IEEE 6th International Memory Workshop, IMW 2014
PublisherIEEE Computer Society
ISBN (Print)9781479935949
DOIs
StatePublished - 2014
Event2014 IEEE 6th International Memory Workshop, IMW 2014 - Taipei, Taiwan, Province of China
Duration: May 18 2014May 21 2014

Publication series

Name2014 IEEE 6th International Memory Workshop, IMW 2014

Other

Other2014 IEEE 6th International Memory Workshop, IMW 2014
Country/TerritoryTaiwan, Province of China
CityTaipei
Period5/18/145/21/14

Keywords

  • Magnetic Tunnel Junctions
  • MeRAM
  • Nonvolatile Memory
  • SOT-MRAM
  • STT-RAM
  • Spintronics MRAM

ASJC Scopus subject areas

  • Software

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