Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques

Pedram Khalili Amiri; Kang L. Wang

doi:10.1109/IMW.2014.6849352

Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques

Pedram Khalili Amiri, Kang L. Wang

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.

Original language	English (US)
Title of host publication	2014 IEEE 6th International Memory Workshop, IMW 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479935949
DOIs	https://doi.org/10.1109/IMW.2014.6849352
State	Published - 2014
Event	2014 IEEE 6th International Memory Workshop, IMW 2014 - Taipei, Taiwan, Province of China Duration: May 18 2014 → May 21 2014

Publication series

Name	2014 IEEE 6th International Memory Workshop, IMW 2014

Other

Other	2014 IEEE 6th International Memory Workshop, IMW 2014
Country/Territory	Taiwan, Province of China
City	Taipei
Period	5/18/14 → 5/21/14

Keywords

Magnetic Tunnel Junctions
MeRAM
Nonvolatile Memory
SOT-MRAM
STT-RAM
Spintronics MRAM

ASJC Scopus subject areas

Software

Access to Document

10.1109/IMW.2014.6849352

Cite this

@inproceedings{660c068c3fcf4e3ea2af7a2f72020c53,

title = "Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques",

abstract = "We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.",

keywords = "Magnetic Tunnel Junctions, MeRAM, Nonvolatile Memory, SOT-MRAM, STT-RAM, Spintronics MRAM",

author = "Amiri, {Pedram Khalili} and Wang, {Kang L.}",

year = "2014",

doi = "10.1109/IMW.2014.6849352",

language = "English (US)",

isbn = "9781479935949",

series = "2014 IEEE 6th International Memory Workshop, IMW 2014",

publisher = "IEEE Computer Society",

booktitle = "2014 IEEE 6th International Memory Workshop, IMW 2014",

address = "United States",

}

Amiri, PK & Wang, KL 2014, Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques. in 2014 IEEE 6th International Memory Workshop, IMW 2014., 6849352, 2014 IEEE 6th International Memory Workshop, IMW 2014, IEEE Computer Society, 2014 IEEE 6th International Memory Workshop, IMW 2014, Taipei, Taiwan, Province of China, 5/18/14. https://doi.org/10.1109/IMW.2014.6849352

TY - GEN

T1 - Low-power MRAM for nonvolatile electronics

T2 - 2014 IEEE 6th International Memory Workshop, IMW 2014

AU - Amiri, Pedram Khalili

AU - Wang, Kang L.

PY - 2014

Y1 - 2014

N2 - We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.

AB - We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.

KW - Magnetic Tunnel Junctions

KW - MeRAM

KW - Nonvolatile Memory

KW - SOT-MRAM

KW - STT-RAM

KW - Spintronics MRAM

UR - http://www.scopus.com/inward/record.url?scp=84904680119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904680119&partnerID=8YFLogxK

U2 - 10.1109/IMW.2014.6849352

DO - 10.1109/IMW.2014.6849352

M3 - Conference contribution

AN - SCOPUS:84904680119

SN - 9781479935949

T3 - 2014 IEEE 6th International Memory Workshop, IMW 2014

BT - 2014 IEEE 6th International Memory Workshop, IMW 2014

PB - IEEE Computer Society

Y2 - 18 May 2014 through 21 May 2014

ER -

Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques

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