Low pressure metal organic chemical vapour deposition of heterojunctions, quantum wells and superlattices of III-V compounds for photonic and electronic devices

Ph Maurel*, M. Defour, C. Grattepain, F. Omnes, O. Acher, G. Timms, M. Razeghi, J. C. Portal

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The authors presented, in this paper, various results for the GaInAsP system. High quality quantum wells, superlattices and heterojunctions have been grown by low pressure metal organic chemical vapor deposition. Results, such as, excitonic absorption at room temperature, two-dimensional electron gas with high mobilities at low temperature, and quantum Hall effects are reported. They all necessitate excellent quality of the interfaces, together with a perfect control of thicknesses, doping levels and/or composition of the layers. All of those conditions are now fulfilled by MOCVD.

Original languageEnglish (US)
Pages (from-to)40-43
Number of pages4
JournalChemtronics
Volume4
Issue number1
StatePublished - Mar 1 1989
EventPapers Presented at the Second Air Products/Epichem Symposium on MOCVD - Brussels, Belg
Duration: Sep 27 1988Sep 27 1988

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Low pressure metal organic chemical vapour deposition of heterojunctions, quantum wells and superlattices of III-V compounds for photonic and electronic devices'. Together they form a unique fingerprint.

Cite this