The authors presented, in this paper, various results for the GaInAsP system. High quality quantum wells, superlattices and heterojunctions have been grown by low pressure metal organic chemical vapor deposition. Results, such as, excitonic absorption at room temperature, two-dimensional electron gas with high mobilities at low temperature, and quantum Hall effects are reported. They all necessitate excellent quality of the interfaces, together with a perfect control of thicknesses, doping levels and/or composition of the layers. All of those conditions are now fulfilled by MOCVD.
|Original language||English (US)|
|Number of pages||4|
|State||Published - Mar 1 1989|
|Event||Papers Presented at the Second Air Products/Epichem Symposium on MOCVD - Brussels, Belg|
Duration: Sep 27 1988 → Sep 27 1988
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