TY - JOUR
T1 - Low pressure metal organic chemical vapour deposition of heterojunctions, quantum wells and superlattices of III-V compounds for photonic and electronic devices
AU - Maurel, Ph
AU - Defour, M.
AU - Grattepain, C.
AU - Omnes, F.
AU - Acher, O.
AU - Timms, G.
AU - Razeghi, M.
AU - Portal, J. C.
PY - 1989/3/1
Y1 - 1989/3/1
N2 - The authors presented, in this paper, various results for the GaInAsP system. High quality quantum wells, superlattices and heterojunctions have been grown by low pressure metal organic chemical vapor deposition. Results, such as, excitonic absorption at room temperature, two-dimensional electron gas with high mobilities at low temperature, and quantum Hall effects are reported. They all necessitate excellent quality of the interfaces, together with a perfect control of thicknesses, doping levels and/or composition of the layers. All of those conditions are now fulfilled by MOCVD.
AB - The authors presented, in this paper, various results for the GaInAsP system. High quality quantum wells, superlattices and heterojunctions have been grown by low pressure metal organic chemical vapor deposition. Results, such as, excitonic absorption at room temperature, two-dimensional electron gas with high mobilities at low temperature, and quantum Hall effects are reported. They all necessitate excellent quality of the interfaces, together with a perfect control of thicknesses, doping levels and/or composition of the layers. All of those conditions are now fulfilled by MOCVD.
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M3 - Conference article
AN - SCOPUS:0024626989
SN - 0267-5900
VL - 4
SP - 40
EP - 43
JO - Chemtronics
JF - Chemtronics
IS - 1
T2 - Papers Presented at the Second Air Products/Epichem Symposium on MOCVD
Y2 - 27 September 1988 through 27 September 1988
ER -