Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1−xAsyP1−y Alloys

Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

This chapter discusses that metallo-organic chemical vapor deposition (MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of InP, G0.47In0.53 As, and GaxIn1–xAsyP1–y. The GaInAsP/InP alloy system has many advantages and has been given considerable research attention for electro-optical device applications. However, there are still important unsolved problems for the growth of these materials with liquid-phase epitaxy (LPE), vapor-phase epitaxy (VPE), and molecular-beam epitaxy (MBE). One of these is the development of practical LPE techniques for reproducibly growing InP and GaInAsP alloys with a low carrier concentration level. This is especially important for the fabrication of p-i-n and avalanche photodiodes. A further problem with LPE is the growth of InP on longer-wavelength layers, such as GaInAs, without any interface compositional grading layers and anti-melt-back layers. With the VPE technique, it is difficult to obtain misfit dislocation-free InP-GaInAsP-InP heterostructures and very thin layers. A problem for the MBE technique is the growth of phosphorus-bearing alloys.

Original languageEnglish (US)
Pages (from-to)299-378
Number of pages80
JournalSemiconductors and Semimetals
Volume22
Issue numberPA
DOIs
StatePublished - Jan 1 1985

Funding

The author wishes to express her cordial thanks to J. P. Duchemin for his advice and continual encouragement, and the Direction des Affaires Industrielles et Internationales (D.A.I.1) for financial support of part of this work.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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