Low pressure metalorganic chemical vapor deposition of InP and related compounds

M. Razeghi*, M. A. Poisson, J. P. Larivain, J. P. Duchemin

*Corresponding author for this work

Research output: Contribution to journalArticle

82 Scopus citations

Abstract

The low pressure metalorganic chemical vapor deposition epitaxial growth and characterization of InP, Ga0.47In0.53 As and GaxIn1-xAsyP1-y, lattice-matched to InP substrate are described. The layers were found to have the same etch pit density (EPD) as the substrate. The best mobility obtained for InP was 5300 cm2 V-1S-1 at 300 K and 58 900 cm2 V-1 S-1 at 772K, and for GaInAs was 11900 cm2 V-1 S-1 at 300 K, 54 600 cm2 V-1 S-1 at 77 K and 90 000 cm V-1S-1 at 2°K. We report the first successful growth of a GaInAs-InP superlattice and the enhanced mobility of a two dimensional electron gas at a GaInAs -InP heterojunction grown by LP-MO CVD. LP MO CVD material has been used for GaInAsPInP, DH lasers emitting at 1.3 um and 1.5 um. These devices exhibit a low threshold current, a slightly higher than liquid phase epitaxy devices and a high differential quantum efficiency of 60%. Fundamental transverse mode oscillation has been achieved up to a power outpout of 10 mW. Threshold currents as low as 200 mA dc have been measured for devices with a stripe width of 9 um and a cavity length of 300 um for emission at 1.5 um. Values of T in the range 64-80 C have been obtained. Preliminary life testing has been carried out at room temperature on a few laser diodes (λ = 1.5μm). Operation at constant current for severalthousand hours has been achieved with no change in the threshold current.

Original languageEnglish (US)
Pages (from-to)371-395
Number of pages25
JournalJournal of Electronic Materials
Volume12
Issue number2
DOIs
StatePublished - Mar 1 1983

Keywords

  • GaInAs
  • GaInAs
  • InP
  • Metalorganic-CVD
  • P
  • laser
  • superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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