LOW PRESSURE-MOCVD GROWTH OF Ga0. 47In0. 53As-InP HETEROJUNCTION AND SUPERLATTICES.

M. Razeghi*, J. P. Duchemin

*Corresponding author for this work

Research output: Contribution to journalConference article

15 Scopus citations

Abstract

Authors report the lastest results of a continuing study of low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth of InP and Ga//0//. //4//7In//0//. //5//3As-InP heterojunctions and superlattices, which describe the general growth of InP and GaInAs with specific application to quantum well heterostructure. A study of the sources and control of residual impurities in InP and Ga//0//. //4//7In//0//. //5//3As, the effects of source purity upon residual impurities, mobility, and 2 K PL intensity are detailed.

Original languageEnglish (US)
Pages (from-to)262-265
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number2
DOIs
StatePublished - Jan 1 1982
EventProc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA
Duration: Dec 6 1982Dec 10 1982

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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