Abstract
Authors report the lastest results of a continuing study of low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth of InP and Ga//0//. //4//7In//0//. //5//3As-InP heterojunctions and superlattices, which describe the general growth of InP and GaInAs with specific application to quantum well heterostructure. A study of the sources and control of residual impurities in InP and Ga//0//. //4//7In//0//. //5//3As, the effects of source purity upon residual impurities, mobility, and 2 K PL intensity are detailed.
Original language | English (US) |
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Pages (from-to) | 262-265 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 1 |
Issue number | 2 |
DOIs | |
State | Published - 1982 |
Event | Proc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA Duration: Dec 6 1982 → Dec 10 1982 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering