Low pressure organometallic chemical vapor deposition of high-Tc superconducting YBa2Cu3O7-δ films

Jing Zhao*, Klaus Hermann Dahmen, Henry O. Marcy, Lauren M. Tonge, Bruce W. Wessels, Tobin J. Marks, Carl R. Kannewurf

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


High-Tc superconducting YBa2Cu3O7-δ films have been prepared by low-pressure organometallic chemical vapor deposition using Cu(acetylacetonate)2, Y(dipivaloylmethanate)3, and Ba(dipivaloylmethanate)2 as volatile metal-organic precursors. An argon carrier gas is employed and water vapor serves as the reactant. Film growth rates of 10-30 nm min-1 are achieved at a system pressure of 5 torr. After annealing under oxygen, the YBa2Cu3O7-δ films deposited on SrTiO3 exhibit excellent compositional and structural uniformity in addition to preferential orientation of crystalline c axes perpendicular to the SrTiO3 surface. The onset of superconductivity is at ca. 90 K and zero resistance is achieved by 47 K.

Original languageEnglish (US)
Pages (from-to)187-189
Number of pages3
JournalSolid State Communications
Issue number2
StatePublished - Jan 1989

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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