Low temperature atomic layer deposited TiO2 compact layers for planar perovskite solar cells

I. S. Kim, Richard T. Haasch, Duyen H. Cao, O. K. Farha, J. T. Hupp, M. G. Kanatzidis, A. B.F. Martinson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Titanium dioxide (TiO2) thin films have been utilized in a wide range of applications in optoelectronics and solar energy conversion. In particular, TiO2 has been exclusively used in photovoltaic devices and photoelectrochemical cells owing to its ability to efficiently transport electrons and passivate photoactive materials against aqueous media. However, TiO2 exhibits optimal transport properties in the crystalline anatase phase, and thus requires a high temperature annealing, which significantly limits its application in temperature sensitive substrates or active materials (e.g. organic-inorganic hybrid perovskites). Moreover, while high resistance of TiO2 films necessitates the need for ultrathin films to reduce series resistance in PV devices, the synthesis of ultrathin pinhole-free TiO2 films remains a challenge through conventional deposition methods. To address these issues, TiO2 compact layers for planar perovskite PV devices were deposited via atomic layer deposition (ALD) - a chemically diverse vapor phase deposition technique with the capability to synthesize ultrathin pinhole-free films.

Original languageEnglish (US)
Title of host publicationAtomic Layer Deposition Applications 12
EditorsF. Roozeboom, J. W. Elam, J. Dendooven, O. van der Straten, S. De Gendt, C. Liu, C. Huffman
PublisherElectrochemical Society Inc.
Number of pages6
ISBN (Electronic)9781607685395
StatePublished - Jan 1 2016
EventSymposium on Atomic Layer Deposition Applications 12 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


OtherSymposium on Atomic Layer Deposition Applications 12 - PRiME 2016/230th ECS Meeting
CountryUnited States

ASJC Scopus subject areas

  • Engineering(all)

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