Low-Temperature Atomic Layer Deposition of MoS2 Films

Titel Jurca, Michael J. Moody, Alex Henning, Jonathan D. Emery, Binghao Wang, Jeffrey M. Tan, Tracy L. Lohr, Lincoln J. Lauhon*, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations


Wet chemical screening reveals the very high reactivity of Mo(NMe2)4 with H2S for the low-temperature synthesis of MoS2. This observation motivated an investigation of Mo(NMe2)4 as a volatile precursor for the atomic layer deposition (ALD) of MoS2 thin films. Herein we report that Mo(NMe2)4 enables MoS2 film growth at record low temperatures—as low as 60 °C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures.

Original languageEnglish (US)
Pages (from-to)4991-4995
Number of pages5
JournalAngewandte Chemie - International Edition
Issue number18
StatePublished - 2017


  • atomic layer deposition
  • low-temperature film growth
  • metal–organic precursors
  • molybdenum disulfide

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)

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