Low temperature epitaxy of reactively sputtered ZnO on sapphire

K. C. Ruthe*, D. J. Cohen, S. A. Barnett

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The epitaxial growth of ZnO films on c-plane sapphire by dc reactive magnetron sputtering was discussed. The sequencial washing of double-side polished singular Al 2O 3(0001) substrates in acetone and methanol, blown dry with nitrogen prior to loading into the reaction chamber via a load-lock, was also presented. It was observed that the critical thickness at which epitaxial growth becomes polycrystalline or amorphous generally decreases with decreasing substrate temperature, increasing deposition rate and increasing lattice mismatch strain. The study on the effects of various process variables on crystalline perfection and microstructure were carried out to understand the reasons for low epitaxial temperatures.

Original languageEnglish (US)
Pages (from-to)2446-2452
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number6
DOIs
StatePublished - Nov 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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