Abstract
We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.
Original language | English (US) |
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Pages (from-to) | 6549-6552 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 27 |
Issue number | 10 |
DOIs | |
State | Published - 1983 |
ASJC Scopus subject areas
- Condensed Matter Physics