Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

A. Briggs; Y. Guldner; J. P. Vieren; M. Voos; J. P. Hirtz; M. Razeghi

doi:10.1103/PhysRevB.27.6549

Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

A. Briggs^*, Y. Guldner, J. P. Vieren, M. Voos, J. P. Hirtz, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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68 Scopus citations

Abstract

We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.

Original language	English (US)
Pages (from-to)	6549-6552
Number of pages	4
Journal	Physical Review B
Volume	27
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.27.6549
State	Published - 1983

ASJC Scopus subject areas

Condensed Matter Physics

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abstract = "We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.",

author = "A. Briggs and Y. Guldner and Vieren, {J. P.} and M. Voos and Hirtz, {J. P.} and M. Razeghi",

year = "1983",

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T1 - Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

AU - Briggs, A.

AU - Guldner, Y.

AU - Vieren, J. P.

AU - Voos, M.

AU - Hirtz, J. P.

AU - Razeghi, M.

PY - 1983

Y1 - 1983

N2 - We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.

AB - We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.

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DO - 10.1103/PhysRevB.27.6549

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JO - Physical Review B

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Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

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