Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

A. Briggs*, Y. Guldner, J. P. Vieren, M. Voos, J. P. Hirtz, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.

Original languageEnglish (US)
Pages (from-to)6549-6552
Number of pages4
JournalPhysical Review B
Volume27
Issue number10
DOIs
StatePublished - 1983

ASJC Scopus subject areas

  • Condensed Matter Physics

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