Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

A. Briggs; Y. Guldner; J. P. Vieren; M. Voos; J. P. Hirtz; M. Razeghi

doi:10.1103/PhysRevB.27.6549

Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

A. Briggs^*, Y. Guldner, J. P. Vieren, M. Voos, J. P. Hirtz, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.

Original language	English (US)
Pages (from-to)	6549-6552
Number of pages	4
Journal	Physical Review B
Volume	27
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.27.6549
State	Published - 1983

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1103/PhysRevB.27.6549

Cite this

@article{8ba51d32e8f74ec48d6da76923f53591,

title = "Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions",

abstract = "We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.",

author = "A. Briggs and Y. Guldner and Vieren, {J. P.} and M. Voos and Hirtz, {J. P.} and M. Razeghi",

year = "1983",

doi = "10.1103/PhysRevB.27.6549",

language = "English (US)",

volume = "27",

pages = "6549--6552",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

AU - Briggs, A.

AU - Guldner, Y.

AU - Vieren, J. P.

AU - Voos, M.

AU - Hirtz, J. P.

AU - Razeghi, M.

PY - 1983

Y1 - 1983

N2 - We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.

AB - We report investigations of the temperature dependence of the quantized Hall effect in modulation-doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity xx is studied at several maxima and minima of the magnetoresistance xx down to 50 mK. An interesting result is the observation of a hopping conduction mechanism when the Fermi level is in the tail of the broadened Landau levels.

UR - http://www.scopus.com/inward/record.url?scp=0000054993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000054993&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.27.6549

DO - 10.1103/PhysRevB.27.6549

M3 - Article

AN - SCOPUS:0000054993

SN - 0163-1829

VL - 27

SP - 6549

EP - 6552

JO - Physical Review B

JF - Physical Review B

IS - 10

ER -

Low-temperature investigations of the quantum Hall effect in InxGa1-xAs-InP heterojunctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this