Low-temperature thin-film combustion synthesis of metal-oxide semiconductors: Science and technology

Binghao Wang*, Wei Huang, Antonio Facchetti, Tobin Jay Marks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapter


The unique performance characteristics of amorphous, optically transparent metal-oxide electronic materials fill the gap between amorphous silicon and polysilicon, making them the ideal candidates for large-area active-matrix flat-panel displays and other technologies. The compatibility of these materials with low-cost solution-processing, roll-to-roll, high-throughput manufacturing further highlights their attraction. In this chapter, recent advances in low-temperature solution processing, including metal precursor synthesis, thin-film combustion growth, microwave-assisted growth, pressure-assisted growth, and photonic illumination-assisted growth, are discussed. Among these, thin-film combustion synthesis of metal-oxide films is particularly attractive for both n-type and p-type thin-film transistors and their electronic circuitry.

Original languageEnglish (US)
Title of host publicationAmorphous Oxide Semiconductors
Subtitle of host publicationIGZO and Related Materials for Display and Memory
Number of pages24
ISBN (Electronic)9781119715658
ISBN (Print)9781119715573
StatePublished - May 20 2022


  • Combustion synthesis
  • Fuel
  • Low-temperature annealing
  • Metal-oxide transistor
  • Solution processing
  • Thin-film transistor

ASJC Scopus subject areas

  • Engineering(all)


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