Low-temperature thin-film combustion synthesis of metal-oxide semiconductors: Science and technology

The unique performance characteristics of amorphous, optically transparent metal-oxide electronic materials fill the gap between amorphous silicon and polysilicon, making them the ideal candidates for large-area active-matrix flat-panel displays and other technologies. The compatibility of these materials with low-cost solution-processing, roll-to-roll, high-throughput manufacturing further highlights their attraction. In this chapter, recent advances in low-temperature solution processing, including metal precursor synthesis, thin-film combustion growth, microwave-assisted growth, pressure-assisted growth, and photonic illumination-assisted growth, are discussed. Among these, thin-film combustion synthesis of metal-oxide films is particularly attractive for both n-type and p-type thin-film transistors and their electronic circuitry.