Low threshold current density 1.3μm metamorphic InGaAs/GaAs quantum well laser diodes

Donghai Wu*, H. Wang, B. Wu, H. Ni, S. Huang, Y. Xiong, P. Wang, Q. Han, Z. Niu, I. Tångring, S. M. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200m is centred at 1337.2nm; the threshold current density is 205A/cm 2 at room temperature under continuous-wave operation.

Original languageEnglish (US)
Pages (from-to)474-475
Number of pages2
JournalElectronics Letters
Volume44
Issue number7
DOIs
StatePublished - Mar 31 2008

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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