Low-Threshold Distributed Feedback Lasers Fabricated on Material Grown Completely by LP-MOCVD

Maniyeh Razeghi, Robert Blondeau, Michel Krakowski, Michel Papuchon, Baudouin de Cremoux, J. P. Duchemin, Jean Claude Bouley

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 µm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW perfacet at room temperature have been obtained. The lasing wavelength λL under CW operation showed a temperature coefficient (dλL/dT) of 0.9 Å/°C for this DFB laser over the range of 10–90°C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.

Original languageEnglish (US)
Pages (from-to)507-511
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume21
Issue number6
DOIs
StatePublished - Jun 1985

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Razeghi, M., Blondeau, R., Krakowski, M., Papuchon, M., de Cremoux, B., Duchemin, J. P., & Bouley, J. C. (1985). Low-Threshold Distributed Feedback Lasers Fabricated on Material Grown Completely by LP-MOCVD. IEEE Journal of Quantum Electronics, 21(6), 507-511. https://doi.org/10.1109/JQE.1985.1072707