Low-Threshold Distributed Feedback Lasers Fabricated on Material Grown Completely by LP-MOCVD

Maniyeh Razeghi; Robert Blondeau; Michel Krakowski; Michel Papuchon; Baudouin de Cremoux; J. P. Duchemin; Jean Claude Bouley

doi:10.1109/JQE.1985.1072707

Low-Threshold Distributed Feedback Lasers Fabricated on Material Grown Completely by LP-MOCVD

Maniyeh Razeghi, Robert Blondeau, Michel Krakowski, Michel Papuchon, Baudouin de Cremoux, J. P. Duchemin, Jean Claude Bouley

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 µm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW perfacet at room temperature have been obtained. The lasing wavelength λ_L under CW operation showed a temperature coefficient (d_λL/dT) of 0.9 Å/°C for this DFB laser over the range of 10–90°C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.

Original language	English (US)
Pages (from-to)	507-511
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	21
Issue number	6
DOIs	https://doi.org/10.1109/JQE.1985.1072707
State	Published - Jun 1985

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.1985.1072707

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title = "Low-Threshold Distributed Feedback Lasers Fabricated on Material Grown Completely by LP-MOCVD",

abstract = "GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 µm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW perfacet at room temperature have been obtained. The lasing wavelength λL under CW operation showed a temperature coefficient (dλL/dT) of 0.9 {\AA}/°C for this DFB laser over the range of 10–90°C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.",

author = "Maniyeh Razeghi and Robert Blondeau and Michel Krakowski and Michel Papuchon and {de Cremoux}, Baudouin and Duchemin, {J. P.} and Bouley, {Jean Claude}",

year = "1985",

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doi = "10.1109/JQE.1985.1072707",

language = "English (US)",

volume = "21",

pages = "507--511",

journal = "IEEE Journal of Quantum Electronics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Low-Threshold Distributed Feedback Lasers Fabricated on Material Grown Completely by LP-MOCVD

AU - Razeghi, Maniyeh

AU - Blondeau, Robert

AU - Krakowski, Michel

AU - Papuchon, Michel

AU - de Cremoux, Baudouin

AU - Duchemin, J. P.

AU - Bouley, Jean Claude

PY - 1985/6

Y1 - 1985/6

N2 - GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 µm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW perfacet at room temperature have been obtained. The lasing wavelength λL under CW operation showed a temperature coefficient (dλL/dT) of 0.9 Å/°C for this DFB laser over the range of 10–90°C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.

AB - GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 µm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW perfacet at room temperature have been obtained. The lasing wavelength λL under CW operation showed a temperature coefficient (dλL/dT) of 0.9 Å/°C for this DFB laser over the range of 10–90°C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.

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Low-Threshold Distributed Feedback Lasers Fabricated on Material Grown Completely by LP-MOCVD

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