GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 µm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW perfacet at room temperature have been obtained. The lasing wavelength λL under CW operation showed a temperature coefficient (dλL/dT) of 0.9 Å/°C for this DFB laser over the range of 10–90°C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering