Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure Movpe

J. P. Hirtz; M. Razeghi; J. P. Larivain; S. Hersee; J. P. Duchemin

doi:10.1049/el:19810081

Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure Movpe

J. P. Hirtz, M. Razeghi, J. P. Larivain, S. Hersee, J. P. Duchemin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Room temperature pulsed operation has been achieved in the 1·2-1·3 urn region for GalnAsP/lnP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1·2 kA/cm² and threshold temperature dependences of exp T/T₀, with T₀ up to 80 K, have been obtained.

Original language	English (US)
Pages (from-to)	113-115
Number of pages	3
Journal	Electronics Letters
Volume	17
Issue number	3
DOIs	https://doi.org/10.1049/el:19810081
State	Published - Feb 5 1981

Keywords

Epitaxy
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19810081

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title = "Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure Movpe",

abstract = "Room temperature pulsed operation has been achieved in the 1·2-1·3 urn region for GalnAsP/lnP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1·2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.",

keywords = "Epitaxy, Semiconductor lasers",

author = "Hirtz, {J. P.} and M. Razeghi and Larivain, {J. P.} and S. Hersee and Duchemin, {J. P.}",

year = "1981",

month = feb,

day = "5",

doi = "10.1049/el:19810081",

language = "English (US)",

volume = "17",

pages = "113--115",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure Movpe

AU - Hirtz, J. P.

AU - Razeghi, M.

AU - Larivain, J. P.

AU - Hersee, S.

AU - Duchemin, J. P.

PY - 1981/2/5

Y1 - 1981/2/5

N2 - Room temperature pulsed operation has been achieved in the 1·2-1·3 urn region for GalnAsP/lnP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1·2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.

AB - Room temperature pulsed operation has been achieved in the 1·2-1·3 urn region for GalnAsP/lnP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1·2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.

KW - Epitaxy

KW - Semiconductor lasers

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U2 - 10.1049/el:19810081

DO - 10.1049/el:19810081

M3 - Article

AN - SCOPUS:0019872957

SN - 0013-5194

VL - 17

SP - 113

EP - 115

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure Movpe

Abstract

Keywords

ASJC Scopus subject areas

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