Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure Movpe

J. P. Hirtz, M. Razeghi, J. P. Larivain, S. Hersee, J. P. Duchemin

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Room temperature pulsed operation has been achieved in the 1·2-1·3 urn region for GalnAsP/lnP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1·2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.

Original languageEnglish (US)
Pages (from-to)113-115
Number of pages3
JournalElectronics Letters
Volume17
Issue number3
DOIs
StatePublished - Feb 5 1981

Keywords

  • Epitaxy
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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