Room temperature pulsed operation has been achieved in the 1·2-1·3 urn region for GalnAsP/lnP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1·2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering