Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

Yongsuk Choi, Junmo Kang, Deep Jariwala, Moon Sung Kang, Tobin J. Marks, Mark C. Hersam*, Jeong Ho Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations


A study is conducted to demonstrate low-voltage vertical field-effect transistors (VFETs) and complementary inverters based on graphene-TMDC heterostructures and ion-gel gate dielectrics. The VFET structure is formed by vertically sandwiching a TMDC semiconductor layer between grapheme and metal electrodes while employing a separate coplanar gate electrode that applies an electric field to the vertical channel through an ion gel. Specifically, the channel current is modulated by tuning the Schottky barrier height across the graphene-TMDC heterojunction by an external bias applied to the coplanar gate electrode. The high ion-gel-dielectric specific capacitance allows the work function of the underlying graphene to be readily modulated at low voltages, ultimately accessing new regimes of ambipolar charge transport.

Original languageEnglish (US)
Pages (from-to)3742-3748
Number of pages7
JournalAdvanced Materials
Issue number19
StatePublished - 2016


  • Schottky barrier
  • graphene
  • ion gels
  • low power
  • transition-metal dichalcogenides
  • vertical transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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