Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics

Myung Han Yoon, He Yan, Antonio Facchetti*, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticle

374 Scopus citations

Abstract

The quest for high-performance organic thin-film transistor (OTFT) gate dielectrics is of intense current interest. Beyond having excellent insulating properties, such materials must meet other stringent requirements for optimum OTFT function: efficient low-temperature solution fabrication, mechanical flexibility, and compatibility with diverse gate materials and organic semiconductors. The OTFTs should function at low biases to minimize power consumption, hence the dielectric must exhibit large gate capacitance. We report the realization of new spin-coatable, ultrathin (<20 nm) cross-linked polymer blends exhibiting excellent insulating properties (leakage current densities ∼10-8 Acm-2), large capacitances (up to ∼300 nF cm-2), and enabling low-voltage OTFT functions. These dielectrics exhibit good uniformity over areas ∼150 cm2, are insoluble in common solvents, can be patterned using standard microelectronic etching methodologies, and adhere to/are compatible with n+-Si, ITO, and AI gates, and with a wide range of p- and n-type semiconductors. Using these dielectrics, complementary inverters have been fabricated which function at 2V.

Original languageEnglish (US)
Pages (from-to)10388-10395
Number of pages8
JournalJournal of the American Chemical Society
Volume127
Issue number29
DOIs
StatePublished - Jul 27 2005

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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