Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

P. Khalili Amiri*, Z. M. Zeng, P. Upadhyaya, G. Rowlands, H. Zhao, I. N. Krivorotov, J. P. Wang, H. W. Jiang, J. A. Katine, J. Langer, K. Galatsis, K. L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.

Original languageEnglish (US)
Article number5623296
Pages (from-to)57-59
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number1
DOIs
StatePublished - Jan 1 2011

Keywords

  • Magnetic tunnel junctions (MTJs)
  • magnetoresistive random access memory (MRAM)
  • nonvolatile memory
  • spin transfer torque (STT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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