LP-MOCVD GROWTH AND CW OPERATION OF HIGH QUALITY SLM AND DFB SEMICONDUCTOR Ga//xIn//1// minus //xAs//yP//1// minus //y-InP LASERS.

M. Razeghi*, R. Blondeau, J. C. Boulay, B. de Cremoux, J. P. Duchemin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Room temperature CW operation of single longitudinal mode (SLM) and distributed feed back (DFB) semiconductor lasers have been achieved in Ga//xIn//1// minus //xAs//yP//1// minus //y-InP (1. 2-1. 6 mu m region) DH lasers fabricated on material grown by two-step low pressure metalorganic chemical vapor deposition (LP-MOCVD), over large area of InP substrate (10 cm**2). Room temperature CW threshold currents as low as 25 mA have been measured for stripe buried (SB) devices with cavity length of 300 mu m and stripe width of 2 mu m. 1. 57 mu m low threshold current (60 mA CW) stable SLM (DFB) operation at fixed mode was obtained under the CW condition, in the temperature range from 9 degree C to 90 degree C, with the wavelength shift of 0. 9 A/ degree C.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages451-456
Number of pages6
Edition74
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Razeghi, M., Blondeau, R., Boulay, J. C., de Cremoux, B., & Duchemin, J. P. (1985). LP-MOCVD GROWTH AND CW OPERATION OF HIGH QUALITY SLM AND DFB SEMICONDUCTOR Ga//xIn//1// minus //xAs//yP//1// minus //y-InP LASERS. In B. de Cremoux (Ed.), Institute of Physics Conference Series (74 ed., pp. 451-456)