Room temperature CW operation of single longitudinal mode (SLM) and distributed feed back (DFB) semiconductor lasers have been achieved in Ga//xIn//1// minus //xAs//yP//1// minus //y-InP (1. 2-1. 6 mu m region) DH lasers fabricated on material grown by two-step low pressure metalorganic chemical vapor deposition (LP-MOCVD), over large area of InP substrate (10 cm**2). Room temperature CW threshold currents as low as 25 mA have been measured for stripe buried (SB) devices with cavity length of 300 mu m and stripe width of 2 mu m. 1. 57 mu m low threshold current (60 mA CW) stable SLM (DFB) operation at fixed mode was obtained under the CW condition, in the temperature range from 9 degree C to 90 degree C, with the wavelength shift of 0. 9 A/ degree C.
|Original language||English (US)|
|Title of host publication||Institute of Physics Conference Series|
|Editors||B. de Cremoux|
|Number of pages||6|
|State||Published - Dec 1 1985|
ASJC Scopus subject areas
- Physics and Astronomy(all)