LP-MOCVD Growth, Characterization, and Application of InP Material

Manijeh Razeghi

doi:10.1016/S0080-8784(08)62558-2

LP-MOCVD Growth, Characterization, and Application of InP Material

Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This chapter describes the recent progress made on the growth, characterization, and application of indium phosphide (InP) and related compounds grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) growth technique. The chapter describes the energy-band structure and also introduces epitaxial growth techniques. The chapter describes the growth and characterization of InP using tetraethyl In (TEIn) and phosphine (PH₃). The growth of InP using trimethyl In (TMIn) is described in the chapter. The application of InP epitaxial layers in the fabrication of Gunn diodes is detailed in the chapter. The use of silicon and gallium-gadolinium-garnet (GGG) substrates for the MOCVD growth of InP and GaAs is described in the chapter. The chapter also discusses optoelectronic applications utilizing layers grown by LPMOCVD. The InP-based semiconductor alloys defined as having an energy gap E_g > 2.0 eV are listed in the chapter along with the properties relevant to their crystal growth and some of their physical parameters.

Original language	English (US)
Pages (from-to)	243-355
Number of pages	113
Journal	Semiconductors and Semimetals
Volume	31
Issue number	C
DOIs	https://doi.org/10.1016/S0080-8784(08)62558-2
State	Published - Jan 1 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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title = "LP-MOCVD Growth, Characterization, and Application of InP Material",

abstract = "This chapter describes the recent progress made on the growth, characterization, and application of indium phosphide (InP) and related compounds grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) growth technique. The chapter describes the energy-band structure and also introduces epitaxial growth techniques. The chapter describes the growth and characterization of InP using tetraethyl In (TEIn) and phosphine (PH3). The growth of InP using trimethyl In (TMIn) is described in the chapter. The application of InP epitaxial layers in the fabrication of Gunn diodes is detailed in the chapter. The use of silicon and gallium-gadolinium-garnet (GGG) substrates for the MOCVD growth of InP and GaAs is described in the chapter. The chapter also discusses optoelectronic applications utilizing layers grown by LPMOCVD. The InP-based semiconductor alloys defined as having an energy gap Eg > 2.0 eV are listed in the chapter along with the properties relevant to their crystal growth and some of their physical parameters.",

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