LP-MOCVD Growth, Characterization, and Application of InP Material

Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


This chapter describes the recent progress made on the growth, characterization, and application of indium phosphide (InP) and related compounds grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) growth technique. The chapter describes the energy-band structure and also introduces epitaxial growth techniques. The chapter describes the growth and characterization of InP using tetraethyl In (TEIn) and phosphine (PH3). The growth of InP using trimethyl In (TMIn) is described in the chapter. The application of InP epitaxial layers in the fabrication of Gunn diodes is detailed in the chapter. The use of silicon and gallium-gadolinium-garnet (GGG) substrates for the MOCVD growth of InP and GaAs is described in the chapter. The chapter also discusses optoelectronic applications utilizing layers grown by LPMOCVD. The InP-based semiconductor alloys defined as having an energy gap Eg > 2.0 eV are listed in the chapter along with the properties relevant to their crystal growth and some of their physical parameters.

Original languageEnglish (US)
Pages (from-to)243-355
Number of pages113
JournalSemiconductors and Semimetals
Issue numberC
StatePublished - Jan 1 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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