Luminescence of heteroepitaxial zinc oxide

S. Bethke*, H. Pan, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

315 Scopus citations

Abstract

Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.

Original languageEnglish (US)
Pages (from-to)138-140
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number2
DOIs
StatePublished - Dec 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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