Luminescence of heteroepitaxial zinc oxide

S. Bethke; H. Pan; Bruce W Wessels

doi:10.1063/1.99030

Luminescence of heteroepitaxial zinc oxide

S. Bethke^*, H. Pan, Bruce W Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

315 Scopus citations

Abstract

Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.

Original language	English (US)
Pages (from-to)	138-140
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	2
DOIs	https://doi.org/10.1063/1.99030
State	Published - Dec 1 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Luminescence of heteroepitaxial zinc oxide",

abstract = "Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.",

author = "S. Bethke and H. Pan and Wessels, {Bruce W}",

year = "1988",

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AU - Bethke, S.

AU - Pan, H.

AU - Wessels, Bruce W

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N2 - Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.

AB - Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.

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