Abstract
Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.
Original language | English (US) |
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Pages (from-to) | 138-140 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 52 |
Issue number | 2 |
DOIs | |
State | Published - Dec 1 1988 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)