Luminescent properties of Er-doped BaTiO3 thin films for optical waveguides

Gregory M. Ford*, Andrew Teren, Bruce W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Erbium doped BaTiO3 thin films for optical waveguide applications were investigated. Characteristic 4f emission at 1560 nm is observed for Er concentrations ranging from 1018 to 1020 cm-3. Factors which determined the luminescence efficiency were investigated and a model for efficiency was developed. The luminescence intensity depended predominantly upon two factors: the concentration of radiative Er centers and the de-excitation efficiency of the excited 4f electron state. At a growth temperature of 725 °C, the concentration of radiative Er ions was independent of Er dopant concentration. Annealing the thin films in an oxidizing ambient resulted in increased luminescence efficiency whereas annealing under reducing conditions quenched the luminescence.

Original languageEnglish (US)
Pages (from-to)101-106
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3622
StatePublished - Jan 1 1999
EventProceedings of the 1999 Rare-Earth-Doped Materials and Devices III - San Jose, CA, USA
Duration: Jan 27 1999Jan 28 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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