We have studied the magnetic and electrical-transport property variations of epitaxial MnAs thin films grown on Si(001) and GaAs(001) substrates by molecular beam epitaxy as a function of the growth temperature and film thickness. All samples show a ferromagnetic behavior with the exception of MnAsSi (001) deposited at low growth temperatures. Interestingly, the electrical-transport properties change from metallic to semiconducting on decreasing the total thickness from 300 to 20 nm for MnAsGaAs (001) samples. These results indicate a radical change of the electronic structure of the MnAs layer.
|Original language||English (US)|
|Journal||Journal of Applied Physics|
|State||Published - May 15 2005|
ASJC Scopus subject areas
- Physics and Astronomy(all)