Magnetic and electrical-transport property variations of epitaxially grown MnAs thin films

J. H. Song; J. J. Lee; Y. Cui; J. B. Ketterson

doi:10.1063/1.1853871

Magnetic and electrical-transport property variations of epitaxially grown MnAs thin films

J. H. Song, J. J. Lee, Y. Cui, J. B. Ketterson

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We have studied the magnetic and electrical-transport property variations of epitaxial MnAs thin films grown on Si(001) and GaAs(001) substrates by molecular beam epitaxy as a function of the growth temperature and film thickness. All samples show a ferromagnetic behavior with the exception of MnAsSi (001) deposited at low growth temperatures. Interestingly, the electrical-transport properties change from metallic to semiconducting on decreasing the total thickness from 300 to 20 nm for MnAsGaAs (001) samples. These results indicate a radical change of the electronic structure of the MnAs layer.

Original language	English (US)
Article number	10M107
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1853871
State	Published - May 15 2005

Funding

Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant No. F49620-01-1-0428, DARPA Grant No. N00014-02-1-0887, and NSF Grant No. ECS-0224210; use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1853871

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title = "Magnetic and electrical-transport property variations of epitaxially grown MnAs thin films",

abstract = "We have studied the magnetic and electrical-transport property variations of epitaxial MnAs thin films grown on Si(001) and GaAs(001) substrates by molecular beam epitaxy as a function of the growth temperature and film thickness. All samples show a ferromagnetic behavior with the exception of MnAsSi (001) deposited at low growth temperatures. Interestingly, the electrical-transport properties change from metallic to semiconducting on decreasing the total thickness from 300 to 20 nm for MnAsGaAs (001) samples. These results indicate a radical change of the electronic structure of the MnAs layer.",

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AU - Lee, J. J.

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AU - Ketterson, J. B.

N1 - Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant No. F49620-01-1-0428, DARPA Grant No. N00014-02-1-0887, and NSF Grant No. ECS-0224210; use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation.

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N2 - We have studied the magnetic and electrical-transport property variations of epitaxial MnAs thin films grown on Si(001) and GaAs(001) substrates by molecular beam epitaxy as a function of the growth temperature and film thickness. All samples show a ferromagnetic behavior with the exception of MnAsSi (001) deposited at low growth temperatures. Interestingly, the electrical-transport properties change from metallic to semiconducting on decreasing the total thickness from 300 to 20 nm for MnAsGaAs (001) samples. These results indicate a radical change of the electronic structure of the MnAs layer.

AB - We have studied the magnetic and electrical-transport property variations of epitaxial MnAs thin films grown on Si(001) and GaAs(001) substrates by molecular beam epitaxy as a function of the growth temperature and film thickness. All samples show a ferromagnetic behavior with the exception of MnAsSi (001) deposited at low growth temperatures. Interestingly, the electrical-transport properties change from metallic to semiconducting on decreasing the total thickness from 300 to 20 nm for MnAsGaAs (001) samples. These results indicate a radical change of the electronic structure of the MnAs layer.

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Magnetic and electrical-transport property variations of epitaxially grown MnAs thin films

Abstract

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