Magnetic and transport properties of MnGe P 2 films grown on GaAs(001) by molecular beam epitaxy

Y. Cui, W. Mu, J. Lee, J. Song, Y. Kim, J. B. Ketterson, S. Cho

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

MnGe P2 films were grown on undoped GaAs(001) substrates by molecular beam epitaxy. X-ray diffraction analysis reveals a film peak at 66.21°, corresponding to a c -axis of 1.128 nm for the chalcopyrite structure. Superconducting quantum interference device magnetic measurements show ferromagnetic order in the film with a transition temperature around 325 K and hysteresis loop measurements yield with coercive fields of about 1600 Oe and 210 Oe at 250 K and 300 K, respectively. The transport measurements exhibit nonmetallic behavior with p -type carriers and a carrier density increasing with temperature. The anomalous Hall effect (AHE) is observed in the film indicating spin polarized carriers. At low temperatures, the anomalous Hall resistance has a negative sign and decreases in magnitude with increasing temperature, changing sign around 150 K. It then increases with temperature, reaching a maximum around 250 K.

Original languageEnglish (US)
Article number10M518
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
StatePublished - May 15 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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