Magnetic anisotropy and transport properties of epitaxially grown MnAs/ GaAs digital alloys

J. H. Song; Y. Cui; J. J. Lee; Yunki Kim; J. B. Ketterson; Sunglae Cho

doi:10.1063/1.1688531

Magnetic anisotropy and transport properties of epitaxially grown MnAs/ GaAs digital alloys

J. H. Song^*, Y. Cui, J. J. Lee, Yunki Kim, J. B. Ketterson, Sunglae Cho

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The superlattice thin films consisting of metallic ferromagnet MnAs and semiconducting GaAs were observed for an enhancement of both T _c, magnetic anisotropy and the electric transport properties. The fact that the MnAs layer is hexagonal rather than zinc blends was indicated by the structural analysis. The highest T _c and the largest magnetic anisotropy was shown by MnAs(5 nm)/GaAs(5 nm) superlattice. The temperature-dependent resistance of the sample exhibited magnetoresistance and semiconductor-like behavior was suggestive of an interplay between the charge carriers and the localized magnetic ions.

Original language	English (US)
Pages (from-to)	7288-7290
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1688531
State	Published - Jun 1 2004

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Physics and Astronomy(all)

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title = "Magnetic anisotropy and transport properties of epitaxially grown MnAs/ GaAs digital alloys",

abstract = "The superlattice thin films consisting of metallic ferromagnet MnAs and semiconducting GaAs were observed for an enhancement of both T c, magnetic anisotropy and the electric transport properties. The fact that the MnAs layer is hexagonal rather than zinc blends was indicated by the structural analysis. The highest T c and the largest magnetic anisotropy was shown by MnAs(5 nm)/GaAs(5 nm) superlattice. The temperature-dependent resistance of the sample exhibited magnetoresistance and semiconductor-like behavior was suggestive of an interplay between the charge carriers and the localized magnetic ions.",

author = "Song, {J. H.} and Y. Cui and Lee, {J. J.} and Yunki Kim and Ketterson, {J. B.} and Sunglae Cho",

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T1 - Magnetic anisotropy and transport properties of epitaxially grown MnAs/ GaAs digital alloys

AU - Song, J. H.

AU - Cui, Y.

AU - Lee, J. J.

AU - Kim, Yunki

AU - Ketterson, J. B.

AU - Cho, Sunglae

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The superlattice thin films consisting of metallic ferromagnet MnAs and semiconducting GaAs were observed for an enhancement of both T c, magnetic anisotropy and the electric transport properties. The fact that the MnAs layer is hexagonal rather than zinc blends was indicated by the structural analysis. The highest T c and the largest magnetic anisotropy was shown by MnAs(5 nm)/GaAs(5 nm) superlattice. The temperature-dependent resistance of the sample exhibited magnetoresistance and semiconductor-like behavior was suggestive of an interplay between the charge carriers and the localized magnetic ions.

AB - The superlattice thin films consisting of metallic ferromagnet MnAs and semiconducting GaAs were observed for an enhancement of both T c, magnetic anisotropy and the electric transport properties. The fact that the MnAs layer is hexagonal rather than zinc blends was indicated by the structural analysis. The highest T c and the largest magnetic anisotropy was shown by MnAs(5 nm)/GaAs(5 nm) superlattice. The temperature-dependent resistance of the sample exhibited magnetoresistance and semiconductor-like behavior was suggestive of an interplay between the charge carriers and the localized magnetic ions.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 II

ER -

Magnetic anisotropy and transport properties of epitaxially grown MnAs/ GaAs digital alloys

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