Abstract
The magnetic anisotropy of epitaxial InMnAs thin films have been studied using the longitudinal magneto-optical Kerr effect and magnetic force microscopy at room temperature. Square hysteresis loops were obtained for phase pure layers grown on InAs and GaAs substrates. InMnAs layers on GaAs possess magnetic in-plane isotropy as evidenced by hysteresis loops that were independent of in-plane rotations. On the other hand, InMnAs layers on InAs exhibit strong two-fold in-plane anisotropy. The easy axis of magnetization is along the [110] and [1̄1̄0] directions. In addition in-plane elliptical domains predominantly aligned along the easy axis were observed by magnetic force microscopy. The observed uniaxial in-plane anisotropy is attributed to the presence of unrelaxed coherency strain in InMnAs films grown on InAs.
Original language | English (US) |
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Title of host publication | PHYSICS OF SEMICONDUCTORS |
Subtitle of host publication | 27th International Conference on the Physics of Semiconductors, ICPS-27 |
Pages | 347-348 |
Number of pages | 2 |
Volume | 772 |
DOIs | |
State | Published - Jun 30 2005 |
Event | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004 |
Other
Other | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 |
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Country | United States |
City | Flagstaff, AZ |
Period | 7/26/04 → 7/30/04 |
ASJC Scopus subject areas
- Physics and Astronomy(all)