Magnetic anisotropy in epitaxial InMnAs

P. T. Chiu; S. J. May; A. J. Blattner; Bruce W Wessels

doi:10.1063/1.1994131

Magnetic anisotropy in epitaxial InMnAs

P. T. Chiu^*, S. J. May, A. J. Blattner, Bruce W Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The magnetic anisotropy of epitaxial InMnAs thin films have been studied using the longitudinal magneto-optical Kerr effect and magnetic force microscopy at room temperature. Square hysteresis loops were obtained for phase pure layers grown on InAs and GaAs substrates. InMnAs layers on GaAs possess magnetic in-plane isotropy as evidenced by hysteresis loops that were independent of in-plane rotations. On the other hand, InMnAs layers on InAs exhibit strong two-fold in-plane anisotropy. The easy axis of magnetization is along the [110] and [1̄1̄0] directions. In addition in-plane elliptical domains predominantly aligned along the easy axis were observed by magnetic force microscopy. The observed uniaxial in-plane anisotropy is attributed to the presence of unrelaxed coherency strain in InMnAs films grown on InAs.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	347-348
Number of pages	2
Volume	772
DOIs	https://doi.org/10.1063/1.1994131
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country	United States
City	Flagstaff, AZ
Period	7/26/04 → 7/30/04

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Magnetic anisotropy in epitaxial InMnAs",

abstract = "The magnetic anisotropy of epitaxial InMnAs thin films have been studied using the longitudinal magneto-optical Kerr effect and magnetic force microscopy at room temperature. Square hysteresis loops were obtained for phase pure layers grown on InAs and GaAs substrates. InMnAs layers on GaAs possess magnetic in-plane isotropy as evidenced by hysteresis loops that were independent of in-plane rotations. On the other hand, InMnAs layers on InAs exhibit strong two-fold in-plane anisotropy. The easy axis of magnetization is along the [110] and [{\=1}{\=1}0] directions. In addition in-plane elliptical domains predominantly aligned along the easy axis were observed by magnetic force microscopy. The observed uniaxial in-plane anisotropy is attributed to the presence of unrelaxed coherency strain in InMnAs films grown on InAs.",

author = "Chiu, {P. T.} and May, {S. J.} and Blattner, {A. J.} and Wessels, {Bruce W}",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994131",

language = "English (US)",

isbn = "0735402574",

volume = "772",

pages = "347--348",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Chiu, PT, May, SJ, Blattner, AJ & Wessels, BW 2005, Magnetic anisotropy in epitaxial InMnAs. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. vol. 772, pp. 347-348, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994131

TY - GEN

T1 - Magnetic anisotropy in epitaxial InMnAs

AU - Chiu, P. T.

AU - May, S. J.

AU - Blattner, A. J.

AU - Wessels, Bruce W

PY - 2005/6/30

Y1 - 2005/6/30

N2 - The magnetic anisotropy of epitaxial InMnAs thin films have been studied using the longitudinal magneto-optical Kerr effect and magnetic force microscopy at room temperature. Square hysteresis loops were obtained for phase pure layers grown on InAs and GaAs substrates. InMnAs layers on GaAs possess magnetic in-plane isotropy as evidenced by hysteresis loops that were independent of in-plane rotations. On the other hand, InMnAs layers on InAs exhibit strong two-fold in-plane anisotropy. The easy axis of magnetization is along the [110] and [1̄1̄0] directions. In addition in-plane elliptical domains predominantly aligned along the easy axis were observed by magnetic force microscopy. The observed uniaxial in-plane anisotropy is attributed to the presence of unrelaxed coherency strain in InMnAs films grown on InAs.

AB - The magnetic anisotropy of epitaxial InMnAs thin films have been studied using the longitudinal magneto-optical Kerr effect and magnetic force microscopy at room temperature. Square hysteresis loops were obtained for phase pure layers grown on InAs and GaAs substrates. InMnAs layers on GaAs possess magnetic in-plane isotropy as evidenced by hysteresis loops that were independent of in-plane rotations. On the other hand, InMnAs layers on InAs exhibit strong two-fold in-plane anisotropy. The easy axis of magnetization is along the [110] and [1̄1̄0] directions. In addition in-plane elliptical domains predominantly aligned along the easy axis were observed by magnetic force microscopy. The observed uniaxial in-plane anisotropy is attributed to the presence of unrelaxed coherency strain in InMnAs films grown on InAs.

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U2 - 10.1063/1.1994131

DO - 10.1063/1.1994131

M3 - Conference contribution

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SN - 9780735402577

VL - 772

SP - 347

EP - 348

BT - PHYSICS OF SEMICONDUCTORS

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Y2 - 26 July 2004 through 30 July 2004

ER -

Magnetic anisotropy in epitaxial InMnAs

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