Magnetic properties of Ge/MnAs digital heterostructure

J. J. Lee*, M. Y. Kim, J. H. Song, Y. Cui, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Magnetic properties of Ge/MnAs digital heterostructure grown by molecular beam epitaxy are reported. A Ge (1 nm)/MnAs (0.15 nm) digital heterostructure exhibited ferromagnetic ordering below 335 K. More importantly, the Ge (1 nm)/MnAs (0.15 nm) heterostructure shows an n-type conductivity and an anomalous Hall effect at room temperature. Concurrently, the magnetic phase stabilities of the Ge (1 nm)/MnAs (0.15 nm) digital heterostructure have been investigated using the highly precise all-electron full-potential linearized augmented plane-wave (FLAPW) method within the generalized gradient approximation (GGA). A total energy calculations reveal that the ferromagnetic coupling between the Mn atoms is energetically favored over the antiferromagnetic (100) and (110) coupling. The Ge (1 nm)/MnAs (0.15 nm) digital heterostructure also showed a possible half-metallic ferromagnetic phase with a 0.25 eV band gap for the minority spin channel, which indicates a promising possible spintronic application.

Original languageEnglish (US)
Pages (from-to)3034-3036
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number6
DOIs
StatePublished - Jun 2007

Keywords

  • Anomalous Hall effect
  • Digital heterostructure
  • Half-metallicity
  • Magnetic anisotropy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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