Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

G. E. Sterbinsky; S. J. May; P. T. Chiu; B. W. Wessels

doi:10.1016/j.physb.2006.06.159

Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

G. E. Sterbinsky, S. J. May, P. T. Chiu, B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single α phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

Original language	English (US)
Pages (from-to)	370-373
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	388
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physb.2006.06.159
State	Published - Jan 15 2007

Keywords

Anisotropy
Coercive field
Magneto-optic Kerr effect (MOKE)
Manganese arsenide (MnAs)
Metal organic vapor phase epitaxy (MOVPE)
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2006.06.159

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title = "Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE",

abstract = "The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single α phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.",

keywords = "Anisotropy, Coercive field, Magneto-optic Kerr effect (MOKE), Manganese arsenide (MnAs), Metal organic vapor phase epitaxy (MOVPE), Thin films",

author = "Sterbinsky, {G. E.} and May, {S. J.} and Chiu, {P. T.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported by the NSF under the spin electronics program ECS-0224210. Support of Argonne National Labs under grant W-31-109-ENG38 is also acknowledged.",

year = "2007",

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doi = "10.1016/j.physb.2006.06.159",

language = "English (US)",

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AU - Sterbinsky, G. E.

AU - May, S. J.

AU - Chiu, P. T.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported by the NSF under the spin electronics program ECS-0224210. Support of Argonne National Labs under grant W-31-109-ENG38 is also acknowledged.

PY - 2007/1/15

Y1 - 2007/1/15

N2 - The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single α phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

AB - The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single α phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

KW - Anisotropy

KW - Coercive field

KW - Magneto-optic Kerr effect (MOKE)

KW - Manganese arsenide (MnAs)

KW - Metal organic vapor phase epitaxy (MOVPE)

KW - Thin films

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JF - Physica B: Condensed Matter

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Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

Abstract

Keywords

ASJC Scopus subject areas

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