Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

G. E. Sterbinsky, S. J. May, P. T. Chiu, B. W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single α phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

Original languageEnglish (US)
Pages (from-to)370-373
Number of pages4
JournalPhysica B: Condensed Matter
Volume388
Issue number1-2
DOIs
StatePublished - Jan 15 2007

Keywords

  • Anisotropy
  • Coercive field
  • Magneto-optic Kerr effect (MOKE)
  • Manganese arsenide (MnAs)
  • Metal organic vapor phase epitaxy (MOVPE)
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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