Magnetic properties of MnGeAsP films grown on GaAs (100) by molecular beam epitaxy

Y. Cui; J. J. Lee; J. H. Song; L. Luan; Y. Kim; J. B. Ketterson; S. Cho

doi:10.1063/1.1688591

Magnetic properties of MnGeAsP films grown on GaAs (100) by molecular beam epitaxy

Y. Cui^*, J. J. Lee, J. H. Song, L. Luan, Y. Kim, J. B. Ketterson, S. Cho

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The growth of the magnetic MnGeAsP films with the nominal composition MnGe(As _1-xP _x) ₂ on GaAs was discussed.It was found that the films were grown keeping the Mn, Ge and As fluxes constant while varying the P flux. It was observed that the superconducting quantum interference device magnetic measurements showed clear change in the magnetic properties as phosphorus was introduced into the films. Analysis shows that the measured Curie temperatures were over 380 K for P/As ratios larger than 2 which was higher than that of a nominal MnGeAs ₂ and MnGeP ₂ film.

Original language	English (US)
Pages (from-to)	6515-6517
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1688591
State	Published - Jun 1 2004

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Physics and Astronomy(all)

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title = "Magnetic properties of MnGeAsP films grown on GaAs (100) by molecular beam epitaxy",

abstract = "The growth of the magnetic MnGeAsP films with the nominal composition MnGe(As 1-xP x) 2 on GaAs was discussed.It was found that the films were grown keeping the Mn, Ge and As fluxes constant while varying the P flux. It was observed that the superconducting quantum interference device magnetic measurements showed clear change in the magnetic properties as phosphorus was introduced into the films. Analysis shows that the measured Curie temperatures were over 380 K for P/As ratios larger than 2 which was higher than that of a nominal MnGeAs 2 and MnGeP 2 film.",

author = "Y. Cui and Lee, {J. J.} and Song, {J. H.} and L. Luan and Y. Kim and Ketterson, {J. B.} and S. Cho",

year = "2004",

month = jun,

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doi = "10.1063/1.1688591",

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T1 - Magnetic properties of MnGeAsP films grown on GaAs (100) by molecular beam epitaxy

AU - Cui, Y.

AU - Lee, J. J.

AU - Song, J. H.

AU - Luan, L.

AU - Kim, Y.

AU - Ketterson, J. B.

AU - Cho, S.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The growth of the magnetic MnGeAsP films with the nominal composition MnGe(As 1-xP x) 2 on GaAs was discussed.It was found that the films were grown keeping the Mn, Ge and As fluxes constant while varying the P flux. It was observed that the superconducting quantum interference device magnetic measurements showed clear change in the magnetic properties as phosphorus was introduced into the films. Analysis shows that the measured Curie temperatures were over 380 K for P/As ratios larger than 2 which was higher than that of a nominal MnGeAs 2 and MnGeP 2 film.

AB - The growth of the magnetic MnGeAsP films with the nominal composition MnGe(As 1-xP x) 2 on GaAs was discussed.It was found that the films were grown keeping the Mn, Ge and As fluxes constant while varying the P flux. It was observed that the superconducting quantum interference device magnetic measurements showed clear change in the magnetic properties as phosphorus was introduced into the films. Analysis shows that the measured Curie temperatures were over 380 K for P/As ratios larger than 2 which was higher than that of a nominal MnGeAs 2 and MnGeP 2 film.

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U2 - 10.1063/1.1688591

DO - 10.1063/1.1688591

M3 - Article

AN - SCOPUS:2942683270

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SP - 6515

EP - 6517

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 II

ER -

Magnetic properties of MnGeAsP films grown on GaAs (100) by molecular beam epitaxy

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