Magnetic properties of MnGeAsP films grown on GaAs (100) by molecular beam epitaxy

Y. Cui*, J. J. Lee, J. H. Song, L. Luan, Y. Kim, J. B. Ketterson, S. Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The growth of the magnetic MnGeAsP films with the nominal composition MnGe(As 1-xP x) 2 on GaAs was discussed.It was found that the films were grown keeping the Mn, Ge and As fluxes constant while varying the P flux. It was observed that the superconducting quantum interference device magnetic measurements showed clear change in the magnetic properties as phosphorus was introduced into the films. Analysis shows that the measured Curie temperatures were over 380 K for P/As ratios larger than 2 which was higher than that of a nominal MnGeAs 2 and MnGeP 2 film.

Original languageEnglish (US)
Pages (from-to)6515-6517
Number of pages3
JournalJournal of Applied Physics
Volume95
Issue number11 II
DOIs
StatePublished - Jun 1 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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