Magnetic tunnel junctions and their applications in non-volatile circuits

Juan G. Alzate*, Pedram Khalili Amiri, Kang L. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

Magnetic tunnel junctions (MTJs) have become the basic building blocks of spintronic nonvolatile circuits due to their large tunneling magnetoresistance (TMR) values for readout and the possibility to electrically write information into the devices. This chapter focuses on evaluating the performance, challenges,and design parameters of MTJ devices for nonvolatile circuits. The reading, writing, and storing functions are evaluated under the light of the different requirements of nonvolatile circuit applications and utilizing new developments in the design and realization of state-of-the-art MTJs. Finally, examples of the role of MTJs in CMOS-based and beyond-CMOS computing are presented.

Original languageEnglish (US)
Title of host publicationHandbook of Spintronics
PublisherSpringer Netherlands
Pages1127-1171
Number of pages45
ISBN (Electronic)9789400768925
ISBN (Print)9789400768918
DOIs
StatePublished - Sep 16 2015

ASJC Scopus subject areas

  • Computer Science(all)
  • Engineering(all)
  • Materials Science(all)

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