Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation

Guoqiang Yu*, Pramey Upadhyaya, Kin L. Wong, Wanjun Jiang, Juan G. Alzate, Jianshi Tang, Pedram Khalili Amiri, Kang L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

90 Scopus citations

Abstract

The influence of spin-Hall-effect spin torque (SHE-ST) induced by in-plane charge current was studied in microscale Ta/Co20Fe60B20/TaOx films with perpendicular magnetization. Simultaneous electrical transport and polar magneto-optical Kerr effect (MOKE) imaging experiments were used to investigate the switching dynamics. A rich set of switching behaviors was observed, which can be well understood by analyzing a switching-phase diagram and polar MOKE images, considering the competition between SHE-ST and the externally applied magnetic field. Furthermore, we found that domain walls with a particular chirality were dominant in our devices, which suggests the presence of the Dzyaloshinskii-Moriya interaction in the present material system.

Original languageEnglish (US)
Article number104421
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number10
DOIs
StatePublished - Mar 25 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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