Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells

D. C. Rogers*, R. J. Nicholas, J. C. Portal, S. Ben Amor, A. Y. Cho, D. Sivco, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Transitions between the Landau levels of the lowest electron and hole sub-bands have been observed in the inter-band optical absorption of a modulation doped Ga.47In.53AsAl0.48In.52As superlattice and a Ga0.3In.7AsInP strained layer superlattice, in magnetic fields up to 16T. In the unstrained sample, the energies of transitions up to 250 meV above the GaInAs band gap were found to be well described by a parabolic model for the heavy hole band and the model of Bowers and Yafet for the conduction band. In contrast to previous work on undoped quantum wells, no Coulomb binding effects were observed in this lightly doped sample, and this is attributed to screening of the exciton. In the strained sample, the heavy hole sub-band was found to show highly non-parabolic structure, and this is believed to be due to the effects of biaxial strain on the valence band.

Original languageEnglish (US)
Pages (from-to)69-74
Number of pages6
JournalSuperlattices and Microstructures
Volume3
Issue number1
DOIs
StatePublished - Jan 1 1987

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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