Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells

D. C. Rogers; R. J. Nicholas; J. C. Portal; S. Ben Amor; A. Y. Cho; D. Sivco; M. Razeghi

doi:10.1016/0749-6036(87)90180-7

Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells

D. C. Rogers^*, R. J. Nicholas, J. C. Portal, S. Ben Amor, A. Y. Cho, D. Sivco, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Transitions between the Landau levels of the lowest electron and hole sub-bands have been observed in the inter-band optical absorption of a modulation doped Ga_.47In_.53AsAl_0.48In_.52As superlattice and a Ga_0.3In_.7AsInP strained layer superlattice, in magnetic fields up to 16T. In the unstrained sample, the energies of transitions up to 250 meV above the GaInAs band gap were found to be well described by a parabolic model for the heavy hole band and the model of Bowers and Yafet for the conduction band. In contrast to previous work on undoped quantum wells, no Coulomb binding effects were observed in this lightly doped sample, and this is attributed to screening of the exciton. In the strained sample, the heavy hole sub-band was found to show highly non-parabolic structure, and this is believed to be due to the effects of biaxial strain on the valence band.

Original language	English (US)
Pages (from-to)	69-74
Number of pages	6
Journal	Superlattices and Microstructures
Volume	3
Issue number	1
DOIs	https://doi.org/10.1016/0749-6036(87)90180-7
State	Published - 1987

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/0749-6036(87)90180-7

Cite this

@article{f7b3440e7fdd4da0b595c2e29c1204e4,

title = "Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells",

abstract = "Transitions between the Landau levels of the lowest electron and hole sub-bands have been observed in the inter-band optical absorption of a modulation doped Ga.47In.53AsAl0.48In.52As superlattice and a Ga0.3In.7AsInP strained layer superlattice, in magnetic fields up to 16T. In the unstrained sample, the energies of transitions up to 250 meV above the GaInAs band gap were found to be well described by a parabolic model for the heavy hole band and the model of Bowers and Yafet for the conduction band. In contrast to previous work on undoped quantum wells, no Coulomb binding effects were observed in this lightly doped sample, and this is attributed to screening of the exciton. In the strained sample, the heavy hole sub-band was found to show highly non-parabolic structure, and this is believed to be due to the effects of biaxial strain on the valence band.",

author = "Rogers, {D. C.} and Nicholas, {R. J.} and Portal, {J. C.} and {Ben Amor}, S. and Cho, {A. Y.} and D. Sivco and M. Razeghi",

year = "1987",

doi = "10.1016/0749-6036(87)90180-7",

language = "English (US)",

volume = "3",

pages = "69--74",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "1",

}

TY - JOUR

T1 - Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells

AU - Rogers, D. C.

AU - Nicholas, R. J.

AU - Portal, J. C.

AU - Ben Amor, S.

AU - Cho, A. Y.

AU - Sivco, D.

AU - Razeghi, M.

PY - 1987

Y1 - 1987

N2 - Transitions between the Landau levels of the lowest electron and hole sub-bands have been observed in the inter-band optical absorption of a modulation doped Ga.47In.53AsAl0.48In.52As superlattice and a Ga0.3In.7AsInP strained layer superlattice, in magnetic fields up to 16T. In the unstrained sample, the energies of transitions up to 250 meV above the GaInAs band gap were found to be well described by a parabolic model for the heavy hole band and the model of Bowers and Yafet for the conduction band. In contrast to previous work on undoped quantum wells, no Coulomb binding effects were observed in this lightly doped sample, and this is attributed to screening of the exciton. In the strained sample, the heavy hole sub-band was found to show highly non-parabolic structure, and this is believed to be due to the effects of biaxial strain on the valence band.

AB - Transitions between the Landau levels of the lowest electron and hole sub-bands have been observed in the inter-band optical absorption of a modulation doped Ga.47In.53AsAl0.48In.52As superlattice and a Ga0.3In.7AsInP strained layer superlattice, in magnetic fields up to 16T. In the unstrained sample, the energies of transitions up to 250 meV above the GaInAs band gap were found to be well described by a parabolic model for the heavy hole band and the model of Bowers and Yafet for the conduction band. In contrast to previous work on undoped quantum wells, no Coulomb binding effects were observed in this lightly doped sample, and this is attributed to screening of the exciton. In the strained sample, the heavy hole sub-band was found to show highly non-parabolic structure, and this is believed to be due to the effects of biaxial strain on the valence band.

UR - http://www.scopus.com/inward/record.url?scp=0023011454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023011454&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(87)90180-7

DO - 10.1016/0749-6036(87)90180-7

M3 - Article

AN - SCOPUS:0023011454

SN - 0749-6036

VL - 3

SP - 69

EP - 74

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this