Magnetoresistance implications for complementary magnetic tunnel junction logic (CMAT)

Joseph S. Friedman, Damien Querlioz, Alan V. Sahakian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

This concept paper provides a first quantitative analysis of complementary magnetic tunnel junction logic (CMAT), a novel cascaded logic family composed solely of magnetic tunnel junctions (MTJs). CMAT is a non-volatile logic family driven by field-induced spin-switching that was inspired by CMOS. A compact CMAT multiplexer is presented, and the impact of magnetoresistance on its behavior is analyzed. The efficiency of CMAT is shown to be a function of the MTJ magnetoresistance, providing impetus for further development of MTJs for computing applications.

Original languageEnglish (US)
Title of host publicationProceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages143-144
Number of pages2
ISBN (Electronic)9781467378482
DOIs
StatePublished - Aug 5 2015
Externally publishedYes
EventIEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2015 - Boston, United States
Duration: Jul 8 2015Jul 10 2015

Publication series

NameProceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2015

Other

OtherIEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2015
Country/TerritoryUnited States
CityBoston
Period7/8/157/10/15

Keywords

  • beyond-CMOS computing
  • magnetic tunnel junction
  • non-Von Neumann architecture
  • spintronic logic

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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