Magnetoresistance in InMnAs/InAs heterojunctions and its dependence on alloy composition and temperature

J. A. Peters, C. Garcia, B. W. Wessels

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4 Scopus citations

Abstract

We report on the effect of alloy composition and temperature on the large positive magnetoresistance of p-In1-xMnxAs/n-InAs dilute magnetic semiconductor heterojunctions. The junction magnetoconductance with magnetic field and current parallel is well-described by an analytical expression for the total conductance Gtot of two spin split bands. From the junction, magnetoconductance an effective g-factor, due to a large Zeeman effect, was determined for varying Mn concentration. The effective g-factor increases with increasing Mn concentration from 98 to 131 for x Mn = 0.01 to xMn = 0.06. There is an excellent agreement between the calculated curve for the g-factor and the experimentally derived values.

Original languageEnglish (US)
Article number053503
JournalApplied Physics Letters
Volume103
Issue number5
DOIs
StatePublished - Jul 29 2013

Funding

The authors would like to thank Brandon Fisher at the Center for Nanoscale Materials at Argonne National Laboratory for assistance with the measurements. This work was supported by the National Science Foundation (NSF) under grant #DMR-0804479. Extensive use of the facilities of the Materials Research Center at Northwestern University supported by the NSF (No. DMR 0076097) is acknowledged. Use of the Center for Nanoscale Materials at Argonne National Laboratory was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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