Magnetoresistance in InMnAs/InAs heterojunctions and its dependence on alloy composition and temperature

J. A. Peters, C. Garcia, B. W. Wessels

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4 Scopus citations

Abstract

We report on the effect of alloy composition and temperature on the large positive magnetoresistance of p-In1-xMnxAs/n-InAs dilute magnetic semiconductor heterojunctions. The junction magnetoconductance with magnetic field and current parallel is well-described by an analytical expression for the total conductance Gtot of two spin split bands. From the junction, magnetoconductance an effective g-factor, due to a large Zeeman effect, was determined for varying Mn concentration. The effective g-factor increases with increasing Mn concentration from 98 to 131 for x Mn = 0.01 to xMn = 0.06. There is an excellent agreement between the calculated curve for the g-factor and the experimentally derived values.

Original languageEnglish (US)
Article number053503
JournalApplied Physics Letters
Volume103
Issue number5
DOIs
StatePublished - Jul 29 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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