Magnetoresistance in sputtered Fe/Cr multilayer films

E. M. Ho; A. K. Petford-Long

doi:10.1016/0304-8853(95)00788-1

Magnetoresistance in sputtered Fe/Cr multilayer films

E. M. Ho^*, A. K. Petford-Long

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

Polycrystalline Fe/Cr multilayer films were grown by sputter deposition. The as-grown films showed a mixture of ferromagnetic (FM) and antiferromagnetic (AF) coupling, with an unusually small magnetoresistance (MR) given the degree of AF coupling observed. Annealing for 1 h at 300°C increases the AF component, and the MR increases accordingly. Annealing for one more hour, however, decreases the AF component again with a reduction of MR. Changes in microstructure observed on annealing suggest that interface roughness and pin holes in the film are key factors in determining the magnitude of the GMR effect.

Original language	English (US)
Pages (from-to)	65-66
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	156
Issue number	1-3
DOIs	https://doi.org/10.1016/0304-8853(95)00788-1
State	Published - Jan 1 1996
Event	Proceedings of the 1995 2nd International Symposium on Metallic Multilayers, MML - Cambridge, UK Duration: Sep 11 1995 → Sep 14 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{8c369da5972b43cdb9e214e40ea6409f,

title = "Magnetoresistance in sputtered Fe/Cr multilayer films",

abstract = "Polycrystalline Fe/Cr multilayer films were grown by sputter deposition. The as-grown films showed a mixture of ferromagnetic (FM) and antiferromagnetic (AF) coupling, with an unusually small magnetoresistance (MR) given the degree of AF coupling observed. Annealing for 1 h at 300°C increases the AF component, and the MR increases accordingly. Annealing for one more hour, however, decreases the AF component again with a reduction of MR. Changes in microstructure observed on annealing suggest that interface roughness and pin holes in the film are key factors in determining the magnitude of the GMR effect.",

author = "Ho, {E. M.} and Petford-Long, {A. K.}",

year = "1996",

month = jan,

day = "1",

doi = "10.1016/0304-8853(95)00788-1",

language = "English (US)",

volume = "156",

pages = "65--66",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1-3",

note = "Proceedings of the 1995 2nd International Symposium on Metallic Multilayers, MML ; Conference date: 11-09-1995 Through 14-09-1995",

}

TY - JOUR

T1 - Magnetoresistance in sputtered Fe/Cr multilayer films

AU - Ho, E. M.

AU - Petford-Long, A. K.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Polycrystalline Fe/Cr multilayer films were grown by sputter deposition. The as-grown films showed a mixture of ferromagnetic (FM) and antiferromagnetic (AF) coupling, with an unusually small magnetoresistance (MR) given the degree of AF coupling observed. Annealing for 1 h at 300°C increases the AF component, and the MR increases accordingly. Annealing for one more hour, however, decreases the AF component again with a reduction of MR. Changes in microstructure observed on annealing suggest that interface roughness and pin holes in the film are key factors in determining the magnitude of the GMR effect.

AB - Polycrystalline Fe/Cr multilayer films were grown by sputter deposition. The as-grown films showed a mixture of ferromagnetic (FM) and antiferromagnetic (AF) coupling, with an unusually small magnetoresistance (MR) given the degree of AF coupling observed. Annealing for 1 h at 300°C increases the AF component, and the MR increases accordingly. Annealing for one more hour, however, decreases the AF component again with a reduction of MR. Changes in microstructure observed on annealing suggest that interface roughness and pin holes in the film are key factors in determining the magnitude of the GMR effect.

UR - http://www.scopus.com/inward/record.url?scp=0030122929&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030122929&partnerID=8YFLogxK

U2 - 10.1016/0304-8853(95)00788-1

DO - 10.1016/0304-8853(95)00788-1

M3 - Conference article

AN - SCOPUS:0030122929

VL - 156

SP - 65

EP - 66

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1-3

T2 - Proceedings of the 1995 2nd International Symposium on Metallic Multilayers, MML

Y2 - 11 September 1995 through 14 September 1995

ER -