Magnetoresistance of InMnAs magnetic semiconductors

J. A. Peters; Bruce W Wessels

doi:10.1016/j.physe.2009.11.107

Magnetoresistance of InMnAs magnetic semiconductors

J. A. Peters, Bruce W Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We report on the magnetotransport properties of an InMnAs magnetic semiconductor thin film over the temperature range of 19-61 K. A small negative magnetoresistance is observed that becomes positive with increasing field. We find that the magnetoresistance of these films is well described by a semi-empirical model that takes into account the third order p-d exchange Hamiltonian describing the negative contribution and a two-band model for the positive contribution. The negative magnetoresistance of the film originates from spin-dependent scattering of carriers by localized magnetic moments while the positive magnetoresistance is attributed to conduction via spin-split hybridized p-d sub-bands with different conductivities and mobilities.

Original language	English (US)
Pages (from-to)	1447-1450
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2009.11.107
State	Published - Mar 1 2010

Keywords

(In,Mn)As
Diluted magnetic semiconductors
Ferromagnetism
III-V compounds
Magnetoresistance

ASJC Scopus subject areas

Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

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10.1016/j.physe.2009.11.107

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title = "Magnetoresistance of InMnAs magnetic semiconductors",

abstract = "We report on the magnetotransport properties of an InMnAs magnetic semiconductor thin film over the temperature range of 19-61 K. A small negative magnetoresistance is observed that becomes positive with increasing field. We find that the magnetoresistance of these films is well described by a semi-empirical model that takes into account the third order p-d exchange Hamiltonian describing the negative contribution and a two-band model for the positive contribution. The negative magnetoresistance of the film originates from spin-dependent scattering of carriers by localized magnetic moments while the positive magnetoresistance is attributed to conduction via spin-split hybridized p-d sub-bands with different conductivities and mobilities.",

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T1 - Magnetoresistance of InMnAs magnetic semiconductors

AU - Peters, J. A.

AU - Wessels, Bruce W

PY - 2010/3/1

Y1 - 2010/3/1

N2 - We report on the magnetotransport properties of an InMnAs magnetic semiconductor thin film over the temperature range of 19-61 K. A small negative magnetoresistance is observed that becomes positive with increasing field. We find that the magnetoresistance of these films is well described by a semi-empirical model that takes into account the third order p-d exchange Hamiltonian describing the negative contribution and a two-band model for the positive contribution. The negative magnetoresistance of the film originates from spin-dependent scattering of carriers by localized magnetic moments while the positive magnetoresistance is attributed to conduction via spin-split hybridized p-d sub-bands with different conductivities and mobilities.

AB - We report on the magnetotransport properties of an InMnAs magnetic semiconductor thin film over the temperature range of 19-61 K. A small negative magnetoresistance is observed that becomes positive with increasing field. We find that the magnetoresistance of these films is well described by a semi-empirical model that takes into account the third order p-d exchange Hamiltonian describing the negative contribution and a two-band model for the positive contribution. The negative magnetoresistance of the film originates from spin-dependent scattering of carriers by localized magnetic moments while the positive magnetoresistance is attributed to conduction via spin-split hybridized p-d sub-bands with different conductivities and mobilities.

KW - (In,Mn)As

KW - Diluted magnetic semiconductors

KW - Ferromagnetism

KW - III-V compounds

KW - Magnetoresistance

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 5

ER -

Magnetoresistance of InMnAs magnetic semiconductors

Abstract

Keywords

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