Magnetoresistance of InMnAs magnetic semiconductors

J. A. Peters, Bruce W Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


We report on the magnetotransport properties of an InMnAs magnetic semiconductor thin film over the temperature range of 19-61 K. A small negative magnetoresistance is observed that becomes positive with increasing field. We find that the magnetoresistance of these films is well described by a semi-empirical model that takes into account the third order p-d exchange Hamiltonian describing the negative contribution and a two-band model for the positive contribution. The negative magnetoresistance of the film originates from spin-dependent scattering of carriers by localized magnetic moments while the positive magnetoresistance is attributed to conduction via spin-split hybridized p-d sub-bands with different conductivities and mobilities.

Original languageEnglish (US)
Pages (from-to)1447-1450
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number5
StatePublished - Mar 1 2010


  • (In,Mn)As
  • Diluted magnetic semiconductors
  • Ferromagnetism
  • III-V compounds
  • Magnetoresistance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials


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