Magnetoresistance of narrow gap magnetic semiconductor heterojunctions

Bruce W Wessels

doi:10.1142/S2010324713400110

Magnetoresistance of narrow gap magnetic semiconductor heterojunctions

Bruce W Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Narrow gap III-V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p-n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs/InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

Original language	English (US)
Article number	1340011
Journal	SPIN
Volume	3
Issue number	4
DOIs	https://doi.org/10.1142/S2010324713400110
State	Published - Dec 1 2013

Keywords

bipolar devices
Magnetic semiconductors
spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1142/S2010324713400110

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@article{96b588da9f264216a807277e7a573197,

title = "Magnetoresistance of narrow gap magnetic semiconductor heterojunctions",

abstract = "Narrow gap III-V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p-n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs/InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.",

keywords = "bipolar devices, Magnetic semiconductors, spintronics",

author = "Wessels, {Bruce W}",

note = "Publisher Copyright: {\textcopyright} 2013 World Scientific Publishing Company.",

year = "2013",

month = dec,

day = "1",

doi = "10.1142/S2010324713400110",

language = "English (US)",

volume = "3",

journal = "SPIN",

issn = "2010-3247",

publisher = "World Scientific",

number = "4",

}

TY - JOUR

T1 - Magnetoresistance of narrow gap magnetic semiconductor heterojunctions

AU - Wessels, Bruce W

PY - 2013/12/1

Y1 - 2013/12/1

N2 - Narrow gap III-V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p-n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs/InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

AB - Narrow gap III-V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p-n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs/InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

KW - bipolar devices

KW - Magnetic semiconductors

KW - spintronics

UR - http://www.scopus.com/inward/record.url?scp=85073161537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073161537&partnerID=8YFLogxK

U2 - 10.1142/S2010324713400110

DO - 10.1142/S2010324713400110

M3 - Article

AN - SCOPUS:85073161537

SN - 2010-3247

VL - 3

JO - SPIN

JF - SPIN

IS - 4

M1 - 1340011

ER -

Magnetoresistance of narrow gap magnetic semiconductor heterojunctions

Abstract

Keywords

ASJC Scopus subject areas

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