Magnetoresistance of narrow gap magnetic semiconductor heterojunctions

Bruce W Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Narrow gap III-V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p-n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs/InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

Original languageEnglish (US)
Article number1340011
Issue number4
StatePublished - Dec 1 2013


  • bipolar devices
  • Magnetic semiconductors
  • spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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