Magnetoresistance of narrow gap magnetic semiconductor heterojunctions

INIS

• magnetoresistance 100%
• magnetic semiconductors 66%
• semiconductor materials 50%
• heterojunctions 50%
• spin 33%
• temperature range 0273-0400 k 33%
• scattering 16%
• devices 16%
• carriers 16%
• magnetic fields 16%
• manganese 16%
• indium arsenides 16%
• p-n junctions 16%
• spin orientation 16%
• junction transistors 16%

Material Science

• Magnetoresistance 100%
• Heterojunction 66%
• Magnetic Semiconductor 66%
• Diode 50%
• Semiconductor Material 33%
• Temperature 33%
• Transistor 16%
• Manganese 16%
• III-V Semiconductor 16%
• Alloying 16%
• Devices 16%