Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

M. Razeghi*, C. Bayram

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.

Original languageEnglish (US)
Title of host publicationPhotonic Materials, Devices, and Applications III
StatePublished - 2009
EventPhotonic Materials, Devices, and Applications III - Dresden, Germany
Duration: May 4 2009May 6 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherPhotonic Materials, Devices, and Applications III


  • AlGaN
  • Avalanche gain
  • Intersubband absorption
  • Superlattice
  • Terahertz
  • Ultraviolet

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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