TY - GEN
T1 - Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications
AU - Razeghi, M.
AU - Bayram, C.
PY - 2009
Y1 - 2009
N2 - Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.
AB - Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.
KW - AlGaN
KW - Avalanche gain
KW - Intersubband absorption
KW - Superlattice
KW - Terahertz
KW - Ultraviolet
UR - http://www.scopus.com/inward/record.url?scp=70349986964&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349986964&partnerID=8YFLogxK
U2 - 10.1117/12.819390
DO - 10.1117/12.819390
M3 - Conference contribution
AN - SCOPUS:70349986964
SN - 9780819476401
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Photonic Materials, Devices, and Applications III
T2 - Photonic Materials, Devices, and Applications III
Y2 - 4 May 2009 through 6 May 2009
ER -