Material growth and device fabrication of GaAs based 1.3 μm GaInNAs quantum well laser diodes

Zhichuan Niu*, Qin Han, Haiqiao Ni, Xiaohong Yang, Yingqiang Xu, Yun Du, Shiyong Zhang, Hongling Peng, Huan Zhao, Donghai Wu, Shuying Li, Zhenhong He, Zhengwei Ren, Ronghan Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Material growth and device fabrication of the first 1.3 μm quantum well (QW) edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy (MBE) growth conditions and the tuning of the indium and nitrogen composition of the GaInNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3 μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3 mu;m under continuous current injection at room temperature with threshold current of 1 kA/cm2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30 mW is obtained.

Original languageEnglish (US)
Pages (from-to)1860-1864
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Issue number9
StatePublished - Sep 2005


  • GaAs based materials
  • GaInNAs quantum wells
  • Laser diodes
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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