Material growth and device fabrication of GaAs based 1.3 μm GaInNAs quantum well laser diodes

Zhichuan Niu; Qin Han; Haiqiao Ni; Xiaohong Yang; Yingqiang Xu; Yun Du; Shiyong Zhang; Hongling Peng; Huan Zhao; Donghai Wu; Shuying Li; Zhenhong He; Zhengwei Ren; Ronghan Wu

Material growth and device fabrication of GaAs based 1.3 μm GaInNAs quantum well laser diodes

Zhichuan Niu^*, Qin Han, Haiqiao Ni, Xiaohong Yang, Yingqiang Xu, Yun Du, Shiyong Zhang, Hongling Peng, Huan Zhao, Donghai Wu, Shuying Li, Zhenhong He, Zhengwei Ren, Ronghan Wu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Material growth and device fabrication of the first 1.3 μm quantum well (QW) edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy (MBE) growth conditions and the tuning of the indium and nitrogen composition of the GaInNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3 μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3 mu;m under continuous current injection at room temperature with threshold current of 1 kA/cm² for the laser diode structures with the cleaved facet mirrors. The output light power over 30 mW is obtained.

Original language	English (US)
Pages (from-to)	1860-1864
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	26
Issue number	9
State	Published - Sep 2005

Keywords

GaAs based materials
GaInNAs quantum wells
Laser diodes
Molecular beam epitaxy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Material growth and device fabrication of GaAs based 1.3 μm GaInNAs quantum well laser diodes",

abstract = "Material growth and device fabrication of the first 1.3 μm quantum well (QW) edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy (MBE) growth conditions and the tuning of the indium and nitrogen composition of the GaInNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3 μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3 mu;m under continuous current injection at room temperature with threshold current of 1 kA/cm2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30 mW is obtained.",

keywords = "GaAs based materials, GaInNAs quantum wells, Laser diodes, Molecular beam epitaxy",

author = "Zhichuan Niu and Qin Han and Haiqiao Ni and Xiaohong Yang and Yingqiang Xu and Yun Du and Shiyong Zhang and Hongling Peng and Huan Zhao and Donghai Wu and Shuying Li and Zhenhong He and Zhengwei Ren and Ronghan Wu",

year = "2005",

month = sep,

language = "English (US)",

volume = "26",

pages = "1860--1864",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "9",

}

TY - JOUR

T1 - Material growth and device fabrication of GaAs based 1.3 μm GaInNAs quantum well laser diodes

AU - Niu, Zhichuan

AU - Han, Qin

AU - Ni, Haiqiao

AU - Yang, Xiaohong

AU - Xu, Yingqiang

AU - Du, Yun

AU - Zhang, Shiyong

AU - Peng, Hongling

AU - Zhao, Huan

AU - Wu, Donghai

AU - Li, Shuying

AU - He, Zhenhong

AU - Ren, Zhengwei

AU - Wu, Ronghan

PY - 2005/9

Y1 - 2005/9

N2 - Material growth and device fabrication of the first 1.3 μm quantum well (QW) edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy (MBE) growth conditions and the tuning of the indium and nitrogen composition of the GaInNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3 μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3 mu;m under continuous current injection at room temperature with threshold current of 1 kA/cm2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30 mW is obtained.

AB - Material growth and device fabrication of the first 1.3 μm quantum well (QW) edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy (MBE) growth conditions and the tuning of the indium and nitrogen composition of the GaInNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3 μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3 mu;m under continuous current injection at room temperature with threshold current of 1 kA/cm2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30 mW is obtained.

KW - GaAs based materials

KW - GaInNAs quantum wells

KW - Laser diodes

KW - Molecular beam epitaxy

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M3 - Article

AN - SCOPUS:30044434452

SN - 0253-4177

VL - 26

SP - 1860

EP - 1864

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 9

ER -

Material growth and device fabrication of GaAs based 1.3 μm GaInNAs quantum well laser diodes

Abstract

Keywords

ASJC Scopus subject areas

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