Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

Lan Yin, Carl Bozler, Daniel V. Harburg, Fiorenzo Omenetto, John A. Rogers*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Original languageEnglish (US)
Article number014105
JournalApplied Physics Letters
Volume106
Issue number1
DOIs
StatePublished - Jan 5 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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