Materials and patterning techniques for macroelectronics

Yugang Sun; Shawn Mack; Matthew Meitl; John A. Rogers

Materials and patterning techniques for macroelectronics

Yugang Sun^*, Shawn Mack, Matthew Meitl, John A. Rogers

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Flexible thin film transistors (TFTs) with high performance can be fabricated by using printable arrays of microstructured Si ribbons or GaAs wires (μs-Si or μs-GaAs) generated from high-quality, single-crystal, bulk wafers. The resulting Si-based MOSFETs and GaAs-based MESFETs on thin plastic substrates exhibit excellent electrical and mechanical (i.e. bending) properties. The combined use of these materials and printing techniques may advance the development of practical technologies for emerging applications of lightweight, flexible 'macroelectronic' systems in consumer, space, and military applications.

Original language	English (US)
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	454-457
Number of pages	4
State	Published - 2005
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: Dec 5 2005 → Dec 7 2005

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	12/5/05 → 12/7/05

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@inproceedings{309d4694541f43e0afdfe4f3da142c30,

title = "Materials and patterning techniques for macroelectronics",

abstract = "Flexible thin film transistors (TFTs) with high performance can be fabricated by using printable arrays of microstructured Si ribbons or GaAs wires (μs-Si or μs-GaAs) generated from high-quality, single-crystal, bulk wafers. The resulting Si-based MOSFETs and GaAs-based MESFETs on thin plastic substrates exhibit excellent electrical and mechanical (i.e. bending) properties. The combined use of these materials and printing techniques may advance the development of practical technologies for emerging applications of lightweight, flexible 'macroelectronic' systems in consumer, space, and military applications.",

author = "Yugang Sun and Shawn Mack and Matthew Meitl and Rogers, {John A.}",

year = "2005",

language = "English (US)",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "454--457",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

Sun, Y, Mack, S, Meitl, M & Rogers, JA 2005, Materials and patterning techniques for macroelectronics. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609377, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 454-457, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 12/5/05.

Materials and patterning techniques for macroelectronics. / Sun, Yugang; Mack, Shawn; Meitl, Matthew et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 454-457 1609377 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Sun, Yugang

AU - Mack, Shawn

AU - Meitl, Matthew

AU - Rogers, John A.

PY - 2005

Y1 - 2005

N2 - Flexible thin film transistors (TFTs) with high performance can be fabricated by using printable arrays of microstructured Si ribbons or GaAs wires (μs-Si or μs-GaAs) generated from high-quality, single-crystal, bulk wafers. The resulting Si-based MOSFETs and GaAs-based MESFETs on thin plastic substrates exhibit excellent electrical and mechanical (i.e. bending) properties. The combined use of these materials and printing techniques may advance the development of practical technologies for emerging applications of lightweight, flexible 'macroelectronic' systems in consumer, space, and military applications.

AB - Flexible thin film transistors (TFTs) with high performance can be fabricated by using printable arrays of microstructured Si ribbons or GaAs wires (μs-Si or μs-GaAs) generated from high-quality, single-crystal, bulk wafers. The resulting Si-based MOSFETs and GaAs-based MESFETs on thin plastic substrates exhibit excellent electrical and mechanical (i.e. bending) properties. The combined use of these materials and printing techniques may advance the development of practical technologies for emerging applications of lightweight, flexible 'macroelectronic' systems in consumer, space, and military applications.

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M3 - Conference contribution

AN - SCOPUS:33847709887

SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 454

EP - 457

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -

Materials and patterning techniques for macroelectronics

Abstract

Publication series

Other

ASJC Scopus subject areas

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