Abstract
n-ZnO/p-GaN:Mg hybrid heterojunctions grown on c-Al2O3 substrates showed 375 nm room temperature electroluminescence. It was suggested that the high materials and interface quality obtained using pulsed laser deposition for the n-ZnO growth and metal-organic chemical vapor deposition for the p-GaN:Mg were key factors enabling the injection of holes and the radiative near band edge recombination in the ZnO. In this paper we present the materials characterization of this structure using x-ray diffraction, scanning electron microscopy and atomic force microscopy.
Original language | English (US) |
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Pages (from-to) | 322-326 |
Number of pages | 5 |
Journal | Superlattices and Microstructures |
Volume | 42 |
Issue number | 1-6 |
DOIs | |
State | Published - Jul 2007 |
Keywords
- Heterojunction
- LED
- Pulsed laser deposition
- UV
- ZnO
- p-n
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering