Materials characterization of n - ZnO / p - GaN: Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal-organic chemical vapor deposition

D. Rogers*, F. H. Teherani, P. Kung, K. Minder, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

n-ZnO/p-GaN:Mg hybrid heterojunctions grown on c-Al2O3 substrates showed 375 nm room temperature electroluminescence. It was suggested that the high materials and interface quality obtained using pulsed laser deposition for the n-ZnO growth and metal-organic chemical vapor deposition for the p-GaN:Mg were key factors enabling the injection of holes and the radiative near band edge recombination in the ZnO. In this paper we present the materials characterization of this structure using x-ray diffraction, scanning electron microscopy and atomic force microscopy.

Original languageEnglish (US)
Pages (from-to)322-326
Number of pages5
JournalSuperlattices and Microstructures
Volume42
Issue number1-6
DOIs
StatePublished - Jul 2007

Keywords

  • Heterojunction
  • LED
  • Pulsed laser deposition
  • UV
  • ZnO
  • p-n

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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