Materials for Superconducting Electronics: In Situ Growth of Prgao3Thin Films by Metalorganic Chemical Vapor Deposition

Bin Han; Deborah A. Neumayer; Douglas L. Schulz; Bruce J. Hinds; Tobin J. Marks

doi:10.1116/1.578568

Materials for Superconducting Electronics: In Situ Growth of Prgao₃Thin Films by Metalorganic Chemical Vapor Deposition

Bin Han, Deborah A. Neumayer, Douglas L. Schulz, Bruce J. Hinds, Tobin J. Marks

Chemistry

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Phase-pure thin films of the YBCO, BSCCO, TBCCO lattice-matched and low dielectric-loss perovskite insulator PrGaO₃ have been grown in situ on single-crystal (110) LaA1O₃, (001) SrTiG₃, and (001) MgO substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures between 750 and 800 °C using the volatile metaiorganic /?-diketonate precursors M(dpm)₃ (M = Pr, Ga, and dpm = dipivaloylmethanate) As assessed by x-ray diffraction, the films grow epitaxially on LaAlQ₃ and SrTiO₃ substrates with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface. The films grown on MgO substrates are polycrystalline. Scanning electron microscopy reveals that the MOCVD-derived PrGaO₃ films have smooth, featureless surfaces on all three kinds of substrates.

Original language	English (US)
Pages (from-to)	1431-1434
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	11
Issue number	4
DOIs	https://doi.org/10.1116/1.578568
State	Published - Jul 1993

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{9de8fcef6dad4cfea9bed6fc69add13a,

title = "Materials for Superconducting Electronics: In Situ Growth of Prgao3Thin Films by Metalorganic Chemical Vapor Deposition",

abstract = "Phase-pure thin films of the YBCO, BSCCO, TBCCO lattice-matched and low dielectric-loss perovskite insulator PrGaO3 have been grown in situ on single-crystal (110) LaA1O3, (001) SrTiG3, and (001) MgO substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures between 750 and 800 °C using the volatile metaiorganic /?-diketonate precursors M(dpm)3 (M = Pr, Ga, and dpm = dipivaloylmethanate) As assessed by x-ray diffraction, the films grow epitaxially on LaAlQ3 and SrTiO3 substrates with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface. The films grown on MgO substrates are polycrystalline. Scanning electron microscopy reveals that the MOCVD-derived PrGaO3 films have smooth, featureless surfaces on all three kinds of substrates.",

author = "Bin Han and Neumayer, {Deborah A.} and Schulz, {Douglas L.} and Hinds, {Bruce J.} and Marks, {Tobin J.}",

year = "1993",

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doi = "10.1116/1.578568",

language = "English (US)",

volume = "11",

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T2 - In Situ Growth of Prgao3Thin Films by Metalorganic Chemical Vapor Deposition

AU - Han, Bin

AU - Neumayer, Deborah A.

AU - Schulz, Douglas L.

AU - Hinds, Bruce J.

AU - Marks, Tobin J.

PY - 1993/7

Y1 - 1993/7

N2 - Phase-pure thin films of the YBCO, BSCCO, TBCCO lattice-matched and low dielectric-loss perovskite insulator PrGaO3 have been grown in situ on single-crystal (110) LaA1O3, (001) SrTiG3, and (001) MgO substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures between 750 and 800 °C using the volatile metaiorganic /?-diketonate precursors M(dpm)3 (M = Pr, Ga, and dpm = dipivaloylmethanate) As assessed by x-ray diffraction, the films grow epitaxially on LaAlQ3 and SrTiO3 substrates with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface. The films grown on MgO substrates are polycrystalline. Scanning electron microscopy reveals that the MOCVD-derived PrGaO3 films have smooth, featureless surfaces on all three kinds of substrates.

AB - Phase-pure thin films of the YBCO, BSCCO, TBCCO lattice-matched and low dielectric-loss perovskite insulator PrGaO3 have been grown in situ on single-crystal (110) LaA1O3, (001) SrTiG3, and (001) MgO substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures between 750 and 800 °C using the volatile metaiorganic /?-diketonate precursors M(dpm)3 (M = Pr, Ga, and dpm = dipivaloylmethanate) As assessed by x-ray diffraction, the films grow epitaxially on LaAlQ3 and SrTiO3 substrates with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface. The films grown on MgO substrates are polycrystalline. Scanning electron microscopy reveals that the MOCVD-derived PrGaO3 films have smooth, featureless surfaces on all three kinds of substrates.

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Materials for Superconducting Electronics: In Situ Growth of Prgao₃Thin Films by Metalorganic Chemical Vapor Deposition

Abstract

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