Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

W. Fan*, B. Kabius, J. M. Miller, S. Saha, J. A. Carlisle, O. Auciello, R P H Chang, R. Ramesh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.

Original languageEnglish (US)
Pages (from-to)6192-6200
Number of pages9
JournalJournal of Applied Physics
Volume94
Issue number9
DOIs
StatePublished - Nov 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Materials science and integration bases for fabrication of (Ba <sub>x</sub>Sr<sub>1-x</sub>)TiO<sub>3</sub> thin film capacitors with layered Cu-based electrodes'. Together they form a unique fingerprint.

Cite this