Abstract
We report a high-throughput procedure for lithographically processing one-dimensional nanowires. This procedure, termed on-wire lithography, combines advances in template-directed synthesis of nanowires with electrochemical deposition and wet-chemical etching and allows routine fabrication of face-to-face disk arrays and gap structures in the range of five to several hundred nanometers. We studied the transport properties of 13-nanometer gaps with and without nanoscopic amounts of conducting polymers deposited within by dip-pen nanolithography.
Original language | English (US) |
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Pages (from-to) | 113-115 |
Number of pages | 3 |
Journal | Science |
Volume | 309 |
Issue number | 5731 |
DOIs | |
State | Published - Jul 1 2005 |
ASJC Scopus subject areas
- General