MBE growth and thermoelectric properties of Bi 2 Te 3 thin films

Sunglae Cho*, Yunki Kim, Antonio DiVenere, George K.L. Wong, Jerry R. Meyer, John B Ketterson

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have grown high quality Bi 2 Te 3 thin films on CdTe(111)B substrates using MBE. Structural properties have been investigated using in-situ reflection high-energy electron diffraction (RHEED) and θ-2θ X-ray diffraction analysis. They show that Bi 2 Te 3 films on CdTe(111) grow along the (00.l) in the hexagonal cell with a layer-by-layer growth mode, resulting in a smooth surface, and an X-ray Bragg peak FWHM of 0.2°. The thermopower and electrical conductivity of the stoichiometric Bi 2 Te 3 films were approx. 200 μV/K and 10 3 (Ωcm) -1 , respectively, comparable to the single crystal bulk values. We have observed the antisite defect effect in Te-rich Bi 2 Te 3 films: excess Te occupies Bi lattice sites and behaves as an n-type dopant. Crystallinity and transport properties are strongly affected by non-stoichiometry.

Original languageEnglish (US)
Pages (from-to)183-188
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume545
StatePublished - Jan 1 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: Nov 30 1998Dec 3 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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