Abstract
Molecular growth epitaxy (MBE) growth of (110) refractory metals on a-plane sapphire was discussed. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) techniques were used. Results showed that both Nb and Ta grow in an approximate layer-by-layer mode and growth in Mo is attributed to greater mismatch with sapphire.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 533-539 |
| Number of pages | 7 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 14 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering