MBE growth of (1 1 0) refractory metals on a-plane sapphire

R. C C Ward, E. J. Grier, A. K. Petford-Long

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Molecular growth epitaxy (MBE) growth of (110) refractory metals on a-plane sapphire was discussed. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) techniques were used. Results showed that both Nb and Ta grow in an approximate layer-by-layer mode and growth in Mo is attributed to greater mismatch with sapphire.

Original languageEnglish (US)
Pages (from-to)533-539
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume14
Issue number9
DOIs
StatePublished - Sep 1 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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