Mbe growth of cdte and zncdte on gaas substrates

C. J. Summer, A. Torab, B. K. Wagner, J. D. Benson, S. R. Stock, P. C. Huang

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

CdTe and ZnCdTe layers have been grown on (001) GaAs substrates between 150-350°C for growth rates of 0.5-2 um/h. For CdTe, (001) and (111) orientations were observed, whereas only the (001) orientation was obtained for ZnCdTe layers. The layers, structural and optical properties were determined from SEM, double-crystal rocking-curve and photoluminescence studies.

Original languageEnglish (US)
Pages (from-to)153-160
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume659
DOIs
StatePublished - Nov 22 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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