Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping

Haydn Chen*, G. E. White, S. R. Stock

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

Original languageEnglish (US)
Pages (from-to)61-64
Number of pages4
JournalMaterials Letters
Issue number2
StatePublished - Feb 1986

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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