Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping

Haydn Chen*, G. E. White, S. R. Stock

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

Original languageEnglish (US)
Pages (from-to)61-64
Number of pages4
JournalMaterials Letters
Volume4
Issue number2
DOIs
StatePublished - Feb 1986

Funding

The authorsg ratefullya cknowledgteh e support of theM aterialSs cienceD ivision oft heD epartment of Energy( GrantN os.D E-FG02-84ER4.509a8n d DE-AC02-76ERO1198T)h. e experimentwse rec arried out at StationX -19Co f the NationaSl ynchrotron Light SourceB, rookhaveNn ationaLl aboratoryT. he ablea ssistancoef T. Hmeloa ndS .R. Hedayaits greatly appreciated.

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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