Abstract
The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.
Original language | English (US) |
---|---|
Pages (from-to) | 61-64 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 4 |
Issue number | 2 |
DOIs | |
State | Published - Feb 1986 |
Funding
The authorsg ratefullya cknowledgteh e support of theM aterialSs cienceD ivision oft heD epartment of Energy( GrantN os.D E-FG02-84ER4.509a8n d DE-AC02-76ERO1198T)h. e experimentwse rec arried out at StationX -19Co f the NationaSl ynchrotron Light SourceB, rookhaveNn ationaLl aboratoryT. he ablea ssistancoef T. Hmeloa ndS .R. Hedayaits greatly appreciated.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering