Abstract
The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd 2 Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd 2 Si has been determined to be 23 × 10 -6 K -1 . Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.
Original language | English (US) |
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Pages (from-to) | 61-64 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 4 |
Issue number | 2 |
DOIs | |
State | Published - Jan 1 1986 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering