Measurement of thermal stress in Pd
                        2
                        Si film on Si(111) by absorption edge contour mapping

Haydn Chen; G. E. White; S. R. Stock

doi:10.1016/0167-577X(86)90050-9

Measurement of thermal stress in Pd ₂ Si film on Si(111) by absorption edge contour mapping

Haydn Chen^*, G. E. White, S. R. Stock

^*Corresponding author for this work

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd ₂ Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd ₂ Si has been determined to be 23 × 10 ^-6 K ^-1 . Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

Original language	English (US)
Pages (from-to)	61-64
Number of pages	4
Journal	Materials Letters
Volume	4
Issue number	2
DOIs	https://doi.org/10.1016/0167-577X(86)90050-9
State	Published - Jan 1 1986

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/0167-577X(86)90050-9

Fingerprint Dive into the research topics of 'Measurement of thermal stress in Pd <sub>2</sub> Si film on Si(111) by absorption edge contour mapping'. Together they form a unique fingerprint.

Cite this

@article{2b9d285af768484e8daa6de59a1df0b0,

title = " Measurement of thermal stress in Pd 2 Si film on Si(111) by absorption edge contour mapping ",

abstract = " The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd 2 Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd 2 Si has been determined to be 23 × 10 -6 K -1 . Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.",

author = "Haydn Chen and White, {G. E.} and Stock, {S. R.}",

year = "1986",

month = jan,

day = "1",

doi = "10.1016/0167-577X(86)90050-9",

language = "English (US)",

volume = "4",

pages = "61--64",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Measurement of thermal stress in Pd 2 Si film on Si(111) by absorption edge contour mapping

AU - Chen, Haydn

AU - White, G. E.

AU - Stock, S. R.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd 2 Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd 2 Si has been determined to be 23 × 10 -6 K -1 . Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

AB - The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd 2 Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd 2 Si has been determined to be 23 × 10 -6 K -1 . Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

UR - http://www.scopus.com/inward/record.url?scp=46149137543&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46149137543&partnerID=8YFLogxK

U2 - 10.1016/0167-577X(86)90050-9

DO - 10.1016/0167-577X(86)90050-9

M3 - Article

AN - SCOPUS:46149137543

VL - 4

SP - 61

EP - 64

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

IS - 2

ER -