Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping

Haydn Chen; G. E. White; S. R. Stock

doi:10.1016/0167-577X(86)90050-9

Measurement of thermal stress in Pd₂Si film on Si(111) by absorption edge contour mapping

Haydn Chen^*, G. E. White, S. R. Stock

^*Corresponding author for this work

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd₂Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd₂Si has been determined to be 23 × 10^-6 K^-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

Original language	English (US)
Pages (from-to)	61-64
Number of pages	4
Journal	Materials Letters
Volume	4
Issue number	2
DOIs	https://doi.org/10.1016/0167-577X(86)90050-9
State	Published - Feb 1986

Funding

The authorsg ratefullya cknowledgteh e support of theM aterialSs cienceD ivision oft heD epartment of Energy( GrantN os.D E-FG02-84ER4.509a8n d DE-AC02-76ERO1198T)h. e experimentwse rec arried out at StationX -19Co f the NationaSl ynchrotron Light SourceB, rookhaveNn ationaLl aboratoryT. he ablea ssistancoef T. Hmeloa ndS .R. Hedayaits greatly appreciated.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/0167-577X(86)90050-9

Cite this

@article{2b9d285af768484e8daa6de59a1df0b0,

title = "Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping",

abstract = "The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.",

author = "Haydn Chen and White, {G. E.} and Stock, {S. R.}",

note = "Funding Information: The authorsg ratefullya cknowledgteh e support of theM aterialSs cienceD ivision oft heD epartment of Energy( GrantN os.D E-FG02-84ER4.509a8n d DE-AC02-76ERO1198T)h. e experimentwse rec arried out at StationX -19Co f the NationaSl ynchrotron Light SourceB, rookhaveNn ationaLl aboratoryT. he ablea ssistancoef T. Hmeloa ndS .R. Hedayaits greatly appreciated.",

year = "1986",

month = feb,

doi = "10.1016/0167-577X(86)90050-9",

language = "English (US)",

volume = "4",

pages = "61--64",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping

AU - Chen, Haydn

AU - White, G. E.

AU - Stock, S. R.

N1 - Funding Information: The authorsg ratefullya cknowledgteh e support of theM aterialSs cienceD ivision oft heD epartment of Energy( GrantN os.D E-FG02-84ER4.509a8n d DE-AC02-76ERO1198T)h. e experimentwse rec arried out at StationX -19Co f the NationaSl ynchrotron Light SourceB, rookhaveNn ationaLl aboratoryT. he ablea ssistancoef T. Hmeloa ndS .R. Hedayaits greatly appreciated.

PY - 1986/2

Y1 - 1986/2

N2 - The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

AB - The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

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