Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping

Haydn Chen; G. E. White; S. R. Stock

doi:10.1016/0167-577X(86)90050-9

Measurement of thermal stress in Pd₂Si film on Si(111) by absorption edge contour mapping

Haydn Chen^*, G. E. White, S. R. Stock

^*Corresponding author for this work

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd₂Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd₂Si has been determined to be 23 × 10^-6 K^-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

Original language	English (US)
Pages (from-to)	61-64
Number of pages	4
Journal	Materials Letters
Volume	4
Issue number	2
DOIs	https://doi.org/10.1016/0167-577X(86)90050-9
State	Published - Feb 1986

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0167-577X(86)90050-9

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title = "Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping",

abstract = "The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.",

author = "Haydn Chen and White, {G. E.} and Stock, {S. R.}",

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year = "1986",

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doi = "10.1016/0167-577X(86)90050-9",

language = "English (US)",

volume = "4",

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journal = "Materials Letters",

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T1 - Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping

AU - Chen, Haydn

AU - White, G. E.

AU - Stock, S. R.

N1 - Funding Information: The authorsg ratefullya cknowledgteh e support of theM aterialSs cienceD ivision oft heD epartment of Energy( GrantN os.D E-FG02-84ER4.509a8n d DE-AC02-76ERO1198T)h. e experimentwse rec arried out at StationX -19Co f the NationaSl ynchrotron Light SourceB, rookhaveNn ationaLl aboratoryT. he ablea ssistancoef T. Hmeloa ndS .R. Hedayaits greatly appreciated.

PY - 1986/2

Y1 - 1986/2

N2 - The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

AB - The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd2Si has been determined to be 23 × 10-6 K-1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

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DO - 10.1016/0167-577X(86)90050-9

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JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

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ER -

Measurement of thermal stress in Pd₂Si film on Si(111) by absorption edge contour mapping

Abstract

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