Measurement system for doping and alloying trends in new thermoelectric materials

T. Hogan*, N. Ghelani, S. Loo, S. Sportouch, S. J. Kim, D. Y. Chung, M. G. Kanatzidis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.

Original languageEnglish (US)
Pages (from-to)671-674
Number of pages4
JournalInternational Conference on Thermoelectrics, ICT, Proceedings
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Engineering(all)

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